Kwinkqubo yoshishino lwe-semiconductor oluya kwiinkqubo zokuvelisa i-nanoscale, ukusika i-wafer, njengekhonkco eliphambili ekuveliseni ii-chip, kuneemfuno ezingqongqo kakhulu zozinzo lwezixhobo. Isiseko se-granite, esinokuxhathisa ukungcangcazela okubalaseleyo kunye nozinzo lobushushu, siye saba yinxalenye ephambili yezixhobo zokusika i-wafer, sibonelela ngesiqinisekiso esithembekileyo sokufezekisa ukucutshungulwa kwe-wafer ngokuchanekileyo nangokufanelekileyo.
Iimpawu zokudambisa okuphezulu kunye nokuchasana nokungcangcazela: Ukukhusela ukuchaneka kokusika kwinqanaba elincinci
Xa izixhobo zokusika i-wafer zisebenza, ukujikeleza ngesantya esiphezulu kwe-spindle, ukungcangcazela okuphezulu kwesixhobo sokusika, kunye nokungcangcazela kwendalo okuveliswa zizixhobo ezijikelezileyo kuya kuba nefuthe elikhulu ekuchanekeni kokusika. Ukusebenza kokudambisa kweziseko zesinyithi zendabuko kunqongophele, okwenza kube nzima ukunciphisa ngokukhawuleza ukungcangcazela, okukhokelela ekujikeni kwezixhobo zokusika kwinqanaba le-micron kwaye kubangele ngokuthe ngqo iziphene ezifana nemiphetho eqhekekileyo kunye nemingxunya kwii-wafers. Iimpawu zokudambisa eziphezulu zesiseko se-granite zisombulule ngokusisiseko le ngxaki.
Iikristale zangaphakathi zeminerali zegranite zidibene ngokusondeleyo, zenza isakhiwo sendalo sokusasaza amandla. Xa ukungcangcazela kudluliselwa kwisiseko, isakhiwo sayo sangaphakathi sinokuguqula ngokukhawuleza amandla okungcangcazela abe ngamandla obushushu, oku kufezekisa ukuncitshiswa okusebenzayo kokungcangcazela. Idatha yovavanyo ibonisa ukuba phantsi kwendawo efanayo yokungcangcazela, isiseko segranite sinokunciphisa i-amplitude yokungcangcazela ngaphezu kwama-90% kwimizuzwana eyi-0.5, ngelixa isiseko sesinyithi sifuna imizuzwana emi-3 ukuya kwemi-5. Olu sebenzi lubalaseleyo lokudambisa luqinisekisa ukuba isixhobo sokusika sihlala sizinzile ngexesha lenkqubo yokusika ye-nanoscale, siqinisekisa umda ogudileyo wokusika i-wafer kwaye sinciphise ngempumelelo izinga lokuqhekeza. Umzekelo, kwinkqubo yokusika i-wafer ye-5nm, izixhobo ezinesiseko segranite zinokulawula ubungakanani bokuqhekeza ngaphakathi kwe-10μm, obungaphezulu kwama-40% kunezixhobo ezinesiseko sesinyithi.
I-coefficient ephantsi kakhulu yokwandiswa kobushushu: Iyamelana nempembelelo yokuguquguquka kobushushu
Ngexesha lenkqubo yokusika i-wafer, ubushushu obuveliswa kukungqubana kwezixhobo zokusika, ukuchithwa kobushushu ngenxa yokusebenza kwexesha elide kwezixhobo, kunye notshintsho kubushushu bendawo yokusebenzela konke oku kunokubangela ukuguquka kobushushu kwezixhobo zezixhobo. I-coefficient yokwandiswa kobushushu bezinto zesinyithi iphezulu (malunga ne-12×10⁻⁶/℃). Xa ubushushu butshintsha nge-5℃, isiseko sesinyithi esibude bemitha e-1 sinokuguquka sibe yi-60μm, nto leyo ebangela ukuba indawo yokusika itshintshe kwaye ichaphazele kakhulu ukuchaneka kokusika.
I-coefficient yokwandiswa kobushushu besiseko segranite yi-(4-8) ×10⁻⁶/℃ kuphela, engaphantsi kwesithathu sezinto zesinyithi. Phantsi kotshintsho olufanayo lobushushu, utshintsho lwayo lobukhulu lunokungahoywa. Idatha elinganisiweyo yeshishini elithile lokuvelisa i-semiconductor ibonisa ukuba ngexesha lokusebenza kweeyure ezi-8 zokusika i-wafer enamandla aphezulu, xa ubushushu obujikeleze umhlaba butshintshatshintsha nge-10℃, indawo yokusika engaphantsi kwesixhobo esinesiseko segranite ingaphantsi kwe-20μm, ngelixa eyesixhobo esinesiseko sesinyithi idlula i-60μm. Olu tshintsho oluzinzileyo lobushushu luqinisekisa ukuba indawo ehambelanayo phakathi kwesixhobo sokusika kunye ne-wafer ihlala ichanekile ngamaxesha onke. Nokuba kuphantsi kokusebenza okuqhubekayo ixesha elide okanye utshintsho olukhulu kubushushu bendalo, ukuhambelana kokuchaneka kokusika kunokugcinwa.
Ukuqina kunye nokumelana nokuguguleka: Qinisekisa ukusebenza okuzinzileyo kwexesha elide kwezixhobo
Ukongeza kwiingenelo zokuxhathisa ukungcangcazela kunye nokuzinza kobushushu, ukuqina okuphezulu kunye nokumelana nokuguguleka kwesiseko segranite kuphucula ngakumbi ukuthembeka kwezixhobo zokusika i-wafer. Igranite inobunzima obuyi-6 ukuya kwi-7 kwisikali seMohs kunye namandla okucinezela angaphezulu kwe-120MPa. Ingamelana noxinzelelo olukhulu kunye namandla okuchaphazeleka ngexesha lenkqubo yokusika kwaye ayiguquguquki. Okwangoku, isakhiwo sayo esixineneyo siyinika ukumelana nokuguguleka okugqwesileyo. Nokuba ngexesha lemisebenzi yokusika rhoqo, umphezulu wesiseko awuguquki, okuqinisekisa ukuba izixhobo zigcina ukusebenza ngokuchanekileyo ixesha elide.
Kwizicelo ezisebenzayo, amashishini amaninzi okuvelisa iiwafer aphucule kakhulu isivuno semveliso kunye nokusebenza kakuhle kwemveliso ngokwamkela izixhobo zokusika ezineziseko zegranite. Idatha evela kwi-foundry ehamba phambili kwihlabathi ibonisa ukuba emva kokwazisa izixhobo zesiseko segranite, isivuno sokusika iiwafer sinyuke ukusuka kwi-88% ukuya ngaphezulu kwe-95%, umjikelo wokugcinwa kwezixhobo wongezwe kathathu, nto leyo enciphisa iindleko zemveliso kwaye iphucula ukhuphiswano lwemarike.
Ukuqukumbela, isiseko segranite, esinokuxhathisa ukungcangcazela okugqwesileyo, ukuzinza kobushushu, ukuqina okuphezulu kunye nokumelana nokuguguleka, sinika iziqinisekiso zokusebenza ezibanzi zezixhobo zokusika iiwafer. Njengoko iteknoloji ye-semiconductor iqhubela phambili ukuya ekuchanekeni okuphezulu, iziseko zegranite ziya kudlala indima ebalulekileyo kwicandelo lokwenziwa kweewafer, zikhuthaza uphuhliso oluqhubekekayo lweshishini le-semiconductor.
Ixesha leposi: Meyi-20-2025