♦I-Alumina (Al)2O3)
Iindawo zeseramikhi ezichanekileyo eziveliswe yiZhongHui Intelligent Manufacturing Group (ZHHIMG) zinokwenziwa ngezinto eziluhlaza zeseramikhi ezicocekileyo kakhulu, i-92 ~ 97% ye-alumina, i-99.5% ye-alumina, i->99.9% ye-alumina, kunye ne-CIP cold isostatic pressing. Ukushisa okuphezulu kunye nomatshini wokuchwetheza ngokuchanekileyo, ukuchaneka kobukhulu be-± 0.001mm, ukuguda ukuya kuthi ga kwi-Ra0.1, sebenzisa ubushushu ukuya kuthi ga kwi-1600 degrees. Imibala eyahlukeneyo yeseramikhi inokwenziwa ngokweemfuno zabathengi, ezinje: mnyama, mhlophe, beige, bomvu obumnyama, njl. Iindawo zeseramikhi ezichanekileyo eziveliswe yinkampani yethu ziyamelana nobushushu obuphezulu, ukugqwala, ukuguguleka kunye nokufakwa kwe-insulation, kwaye zingasetyenziswa ixesha elide kwindawo enobushushu obuphezulu, i-vacuum kunye negesi erhabaxa.
Isetyenziswa kakhulu kwizixhobo ezahlukeneyo zemveliso ye-semiconductor: Iifreyimu (ibrakethi yeseramikhi), iSubstrate (isiseko), iArm/Bridge (i-manipulator), iiMechanical Components kunye neCeramic Air Bearing.
| Igama lemveliso | Ityhubhu yesikwere yeCeramic ye-99 Alumina ecocekileyo kakhulu / ipayipi / intonga | |||||
| Isalathiso | Iyunithi | 85 % Al2O3 | 95 % Al2O3 | 99% Al2O3 | 99.5 % Al2O3 | |
| Uxinano | g/cm3 | 3.3 | 3.65 | 3.8 | 3.9 | |
| Ukufunxwa kwamanzi | % | <0.1 | <0.1 | 0 | 0 | |
| Ubushushu obuxutyiweyo | ℃ | 1620 | 1650 | 1800 | 1800 | |
| Ukuqina | AmaMoh | 7 | 9 | 9 | 9 | |
| Amandla Okugoba (20℃)) | I-Mpa | 200 | 300 | 340 | 360 | |
| Amandla oxinzelelo | I-Kgf/cm2 | 10000 | 25000 | 30000 | 30000 | |
| Ubushushu bokusebenza ixesha elide | ℃ | 1350 | 1400 | 1600 | 1650 | |
| Ubushushu obuphezulu bokusebenza | ℃ | 1450 | 1600 | 1800 | 1800 | |
| Ukumelana nomthamo | 20℃ | Ω. cm3 | >1013 | >1013 | >1013 | >1013 |
| 100℃ | 1012-1013 | 1012-1013 | 1012-1013 | 1012-1013 | ||
| 300℃ | >109 | >1010 | >1012 | >1012 | ||
Ukusetyenziswa kweeseramikhi ze-alumina ezicocekileyo kakhulu:
1. Isetyenziswa kwizixhobo ze-semiconductor: i-ceramic vacuum chuck, idiski yokusika, idiski yokucoca, i-ceramic CHUCK.
2. Iindawo zokudlulisa iiwafer: iichucks zokuphatha iiwafer, iidiski zokusika iiwafer, iidiski zokucoca iiwafer, iikomityi zokufunxa iwafer optical.
3. Imboni yokubonisa iphaneli ye-LED / LCD ethe tyaba: umlomo we-ceramic, idiski yokugaya ye-ceramic, i-LIFT PIN, i-PIN rail.
4. Unxibelelwano lwe-Optical, ishishini lelanga: iityhubhu ze-ceramic, iintonga ze-ceramic, ii-scrapers ze-ceramic zokuprinta isikrini sebhodi yesekethe.
5. Iindawo ezimelana nobushushu nezikhusela umbane: iibheringi zeseramikhi.
Okwangoku, iiceramics ze-aluminium oxide zinokwahlulwa zibe ziiceramics ezicocekileyo neziqhelekileyo. Uthotho lweeceramics ze-aluminium oxide ezicocekileyo nezibhekiselele kwizinto ze-ceramic eziqulethe ngaphezulu kwe-99.9% Al₂O₃. Ngenxa yobushushu bayo obutshisayo obufikelela kwi-1650 - 1990°C kunye nobude bayo bokudlulisa obuyi-1 ~ 6μm, zihlala zicutshungulwa zibe yiglasi edibeneyo endaweni yeplatinum crucible: enokusetyenziswa njengetyhubhu yesodium ngenxa yokuhambisa kwayo ukukhanya kunye nokumelana nokugqwala kwisinyithi se-alkali. Kwishishini le-elektroniki, inokusetyenziswa njengezinto zokukhusela ezihlala ixesha elide kwi-IC substrates. Ngokwemixholo eyahlukeneyo ye-aluminium oxide, uthotho lweeceramics ze-aluminium oxide eziqhelekileyo lunokwahlulwa lube ziiceramics ezingama-99, iiceramics ezingama-95, iiceramics ezingama-90 kunye neeceramics ezingama-85. Ngamanye amaxesha, iiceramics ezine-80% okanye i-75% ye-aluminium oxide nazo zihlelwa njengoluhlu lweeceramics ze-aluminium oxide eziqhelekileyo. Phakathi kwazo, izinto zeseramikhi ze-aluminium oxide ezingama-99 zisetyenziselwa ukuvelisa ityhubhu yesithando somlilo esishushu kakhulu, kunye nezixhobo ezikhethekileyo ezimelana nokuguguleka, ezifana neebheringi zeseramikhi, izitywino zeseramikhi kunye neepleyiti zevalvu. Iiseramikhi ze-aluminium ezingama-95 zisetyenziswa kakhulu njengenxalenye emelana nokuguguleka engagugulekiyo. Iiseramikhi ezingama-85 zihlala zixutywa kwezinye iipropati, ngaloo ndlela ziphucula ukusebenza kombane kunye namandla oomatshini. Ingasebenzisa i-molybdenum, i-niobium, i-tantalum kunye nezinye izitywino zesinyithi, kwaye ezinye zisetyenziswa njengezixhobo zombane zokufunxa.
| Into esemgangathweni (Ixabiso elimeleyo) | Igama lemveliso | I-AES-12 | I-AES-11 | I-AES-11C | I-AES-11F | I-AES-22S | I-AES-23 | AL-31-03 | |
| Ukwakhiwa kweeKhemikhali Imveliso yokuSinta elula eneSodium ephantsi | H₂O | % | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 |
| Hleka kakhulu | % | 0.1 | 0.2 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | |
| Fe₂0₃ | % | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | |
| I-SiO₂ | % | 0.03 | 0.03 | 0.03 | 0.03 | 0.02 | 0.04 | 0.04 | |
| Na₂O | % | 0.04 | 0.04 | 0.04 | 0.04 | 0.02 | 0.04 | 0.03 | |
| I-MgO* | % | - | 0.11 | 0.05 | 0.05 | - | - | - | |
| I-Al₂0₃ | % | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | |
| Ububanzi obuPhakathi beParticle (MT-3300, indlela yohlalutyo lwelaser) | μm | 0.44 | 0.43 | 0.39 | 0.47 | 1.1 | 2.2 | 3 | |
| Ubungakanani bekristale ye-α | μm | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 ~ 1.0 | 0.3 ~ 4 | 0.3 ~ 4 | |
| Ubuninzi Bokwakha** | g/cm³ | 2.22 | 2.22 | 2.2 | 2.17 | 2.35 | 2.57 | 2.56 | |
| Uxinano lweSintering** | g/cm³ | 3.88 | 3.93 | 3.94 | 3.93 | 3.88 | 3.77 | 3.22 | |
| Isantya Sokuncipha Komgca Wokucocwa** | % | 17 | 17 | 18 | 18 | 15 | 12 | 7 | |
* I-MgO ayifakwanga ekubalweni kobunyulu be-Al₂O₃.
* Akukho mgubo wokukala 29.4MPa (300kg/cm²), ubushushu bokuthulula buyi-1600°C.
I-AES-11 / 11C / 11F: Yongeza i-0.05 ~ 0.1% MgO, i-sinterability ilungile kakhulu, ngoko ke iyasebenza kwi-ceramics ze-aluminium oxide ezinobunyulu obungaphezulu kwe-99%.
I-AES-22S: Ibonakaliswa bubuninzi bokwakha kunye nesantya esiphantsi sokuncipha komgca wokusila, iyasebenza kwi-slip form casting kunye nezinye iimveliso ezinkulu ezinemilinganiselo efunekayo yokuchaneka.
I-AES-23 / AES-31-03: Inobunzima obuphezulu bokwakha, i-thixotropy kwaye incinci kune-AES-22S. Eyokuqala isetyenziselwa izinto zodongwe ngelixa eyesibini isetyenziswa njengesinciphisi samanzi kwizinto zokuthintela umlilo, nto leyo eyabangela ukuthandwa.
♦Iimpawu zeSilicon Carbide (SiC)
| Iimpawu eziBanzi | Ubumsulwa bezinto eziphambili (wt%) | 97 | |
| Umbala | Mnyama | ||
| Uxinano (g/cm³) | 3.1 | ||
| Ukufunxwa kwamanzi (%) | 0 | ||
| Iimpawu zoomatshini | Amandla okuguquguquka (MPa) | 400 | |
| Imodulus eselula (GPa) | 400 | ||
| Ubulukhuni beVickers (GPa) | 20 | ||
| Iimpawu zobushushu | Ubushushu obuphezulu bokusebenza (°C) | 1600 | |
| I-coefficient yokwandiswa kobushushu | RT~500°C | 3.9 | |
| (1/°C x 10-6) | RT~800°C | 4.3 | |
| Ukuqhuba kobushushu (W/mx K) | 130 110 | ||
| Ukumelana nobushushu bokumoyikeka ΔT (°C) | 300 | ||
| Iimpawu zoMbane | Ukumelana nomthamo | 25°C | 3 x 106 |
| 300°C | - | ||
| 500°C | - | ||
| 800°C | - | ||
| I-Dielectric constant | 10GHz | - | |
| Ukulahleka kweDielectric (x 10-4) | - | ||
| I-Q Factor (x 104) | - | ||
| I-voltage yokuphazamiseka kwe-dielectric (KV/mm) | - | ||
♦I-Silicon Nitride Ceramic
| Izinto eziphathekayo | Iyunithi | Si₃N₄ |
| Indlela yokuSinta | - | Uxinzelelo lwegesi oluxutyiweyo |
| Uxinano | g/cm³ | 3.22 |
| Umbala | - | Ungwevu Omnyama |
| Izinga lokufunxa amanzi | % | 0 |
| I-Modulus eNcinci | I-Gpa | 290 |
| Ubunzima bukaVickers | I-Gpa | 18 - 20 |
| Amandla oxinzelelo | I-Mpa | 2200 |
| Amandla Okugoba | I-Mpa | 650 |
| Ukuqhuba kweThermal | W/mK | 25 |
| Ukumelana noTshabalalo oluTshisayo | Δ (°C) | 450 - 650 |
| Ubushushu obuphezulu bokuSebenza | °C | 1200 |
| Ukumelana nomthamo | Ω·cm | > 10 ^ 14 |
| I-Dielectric Constant | - | 8.2 |
| Amandla eDielectric | kV/mm | 16 |