Kwinkqubo yokwenziwa kwee-semiconductor echanekileyo neyinkimbinkimbi yokupakisha ii-wafer, uxinzelelo lobushushu lufana "nomtshabalalisi" ofihliweyo ebumnyameni, ohlala esoyikisa umgangatho wokupakisha kunye nokusebenza kwee-chips. Ukusuka kumahluko kwii-coefficients zokwandiswa kobushushu phakathi kwee-chips kunye nezixhobo zokupakisha ukuya kutshintsho olukhulu lobushushu ngexesha lenkqubo yokupakisha, iindlela zokuvelisa uxinzelelo lobushushu zahlukile, kodwa zonke zibonisa isiphumo sokunciphisa izinga lesivuno kunye nokuchaphazela ukuthembeka kwexesha elide kwee-chips. Isiseko se-granite, esineempawu zaso ezikhethekileyo zezinto, ngokuzolileyo siba "ngumncedisi" onamandla ekusingatheni ingxaki yoxinzelelo lobushushu.
Ingxaki yoxinzelelo lobushushu kwiphakheji ye-wafer
Ukupakisha i-wafer kubandakanya umsebenzi wokubambisana wezixhobo ezininzi. Iitships zihlala zenziwe ngezinto ze-semiconductor ezifana ne-silicon, ngelixa izinto zokupakisha ezifana nezinto zokupakisha zeplastiki kunye ne-substrates zahlukile kumgangatho. Xa ubushushu butshintsha ngexesha lenkqubo yokupakisha, izinto ezahlukeneyo zahluka kakhulu kwinqanaba lokwandiswa kobushushu kunye nokuncitshiswa ngenxa yomahluko omkhulu kwi-coefficient of thermal expansion (CTE). Umzekelo, i-coefficient of thermal expansion yeetships ze-silicon imalunga ne-2.6×10⁻⁶/℃, ngelixa i-coefficient of thermal expansion yezinto zokubumba ze-epoxy resin iphezulu njenge-15-20 ×10⁻⁶/℃. Lo msantsa mkhulu ubangela ukuba i-chip kunye nezinto zokupakisha zibe yi-asynchronous ngexesha lokupholisa emva kokupakisha, nto leyo edala uxinzelelo olunamandla lobushushu kwindawo ephakathi kwezi zimbini. Phantsi kwempembelelo eqhubekayo yoxinzelelo lobushushu, i-wafer inokugoba kwaye iguquguquke. Kwiimeko ezinzima, inokubangela iziphene ezibulalayo ezifana nokuqhekeka kwe-chip, ukwaphuka kwamalungu e-solder, kunye nokwahlukana kwe-interface, okubangela umonakalo ekusebenzeni kombane kwe-chip kunye nokuncipha okukhulu kobomi bayo benkonzo. Ngokwezibalo zoshishino, izinga elingalunganga lokupakisha ii-wafer ezibangelwa ziingxaki zoxinzelelo lobushushu linokuba phezulu ukuya kwi-10% ukuya kwi-15%, nto leyo ebangela ukuba kubekho umngcipheko kuphuhliso olusebenzayo nolusemgangathweni kwishishini le-semiconductor.
Iingenelo ezikhethekileyo zeziseko zegranite
I-coefficient ephantsi yokwandiswa kobushushu: I-Granite yenziwe kakhulu ngeekristale zeminerali ezifana ne-quartz kunye ne-feldspar, kwaye i-coefficient yayo yokwandiswa kobushushu iphantsi kakhulu, ngokubanzi isuka kwi-0.6 ukuya kwi-5×10⁻⁶/℃, esondele kakhulu kweyee-silicon chips. Olu phawu lwenza ukuba ngexesha lokusebenza kwezixhobo zokupakisha ze-wafer, nokuba xa kuhlangatyezwana nokuguquguquka kobushushu, umahluko wokwandiswa kobushushu phakathi kwesiseko se-granite kunye ne-chip kunye nezinto zokupakisha uncitshiswe kakhulu. Umzekelo, xa ubushushu butshintsha nge-10℃, umahluko wobukhulu beqonga lokupakisha elakhiwe kwisiseko se-granite unokuncitshiswa ngaphezulu kwe-80% xa kuthelekiswa nesiseko sesinyithi sendabuko, esinciphisa kakhulu uxinzelelo lobushushu olubangelwa kukwandiswa kobushushu obungenasilinganiselo kunye nokucutheka, kwaye sibonelela ngendawo yokuxhasa eqinileyo ye-wafer.
Uzinzo olugqwesileyo lobushushu: I-Granite inozinzo olubalaseleyo lobushushu. Ulwakhiwo lwayo lwangaphakathi luxinene, kwaye iikristale zibotshelelwe ngokusondeleyo ngeebhondi ze-ionic kunye ne-covalent, okuvumela ukuhanjiswa kobushushu kancinci ngaphakathi. Xa izixhobo zokupakisha zidlula kwimijikelo yobushushu enzima, isiseko se-granite sinokucinezela ngempumelelo impembelelo yotshintsho lobushushu kuzo kwaye sigcine intsimi yobushushu ezinzileyo. Uvavanyo olufanelekileyo lubonisa ukuba phantsi kwezinga lokutshintsha kobushushu eliqhelekileyo lezixhobo zokupakisha (ezifana ne-±5℃ ngomzuzu), ukuphambuka kobushushu bomphezulu kwisiseko se-granite kunokulawulwa ngaphakathi kwe-±0.1℃, kuthintelwe isiganeko soxinzelelo lobushushu olubangelwa kukwahluka kobushushu bendawo, ukuqinisekisa ukuba i-wafer ikwindawo efanayo yobushushu eshushu kuyo yonke inkqubo yokupakisha, kwaye kuncitshiswe umthombo wokuveliswa koxinzelelo lobushushu.
Ukuqina okuphezulu kunye nokuxinana kokungcangcazela: Ngexesha lokusebenza kwezixhobo zokupakisha i-wafer, iindawo ezihamba ngoomatshini ngaphakathi (ezifana neemoto, izixhobo zokudlulisa, njl.njl.) ziya kuvelisa ukungcangcazela. Ukuba ezi ngcangcazela zidluliselwa kwi-wafer, ziya kwandisa umonakalo obangelwa kuxinzelelo lobushushu kwi-wafer. Iziseko ze-granite zinokuqina okuphezulu kunye nobunzima obuphezulu kunobo bezinto ezininzi zesinyithi, ezinokumelana ngempumelelo nokuphazamiseka kokungcangcazela kwangaphandle. Okwangoku, isakhiwo sayo sangaphakathi esikhethekileyo siyinika ukusebenza okuhle kakhulu kokuxinana kokungcangcazela kwaye siyenza ikwazi ukukhupha amandla okungcangcazela ngokukhawuleza. Idatha yophando ibonisa ukuba isiseko se-granite sinokunciphisa ukungcangcazela okuphezulu (100-1000Hz) okuveliswa kukusebenza kwezixhobo zokupakisha ngama-60% ukuya kuma-80%, kunciphisa kakhulu isiphumo sokudibanisa sokungcangcazela kunye noxinzelelo lobushushu, kwaye kuqinisekiswe ngakumbi ukuchaneka okuphezulu kunye nokuthembeka okuphezulu kokupakishwa kwe-wafer.
Isiphumo esisebenzayo sokusetyenziswa
Kumgca wemveliso yokupakisha iiwafer weshishini elidumileyo lokuvelisa ii-semiconductor, emva kokwazisa izixhobo zokupakisha ezineziseko zegranite, kuye kwenziwa impumelelo emangalisayo. Ngokusekelwe kuhlalutyo lwedatha yokuhlolwa kweewafers ezili-10,000 emva kokupakisha, ngaphambi kokwamkela isiseko segranite, izinga lesiphene lokujika kwewafer okubangelwa kuxinzelelo lobushushu yayiyi-12%. Nangona kunjalo, emva kokutshintshela kwisiseko segranite, izinga lesiphene lehle kakhulu laya ngaphakathi kwe-3%, kwaye izinga lesivuno laphucuka kakhulu. Ngaphezu koko, uvavanyo lokuthembeka kwexesha elide lubonise ukuba emva kwemijikelo eli-1,000 yobushushu obuphezulu (125℃) kunye nobushushu obuphantsi (-55℃), inani lokusilela kwe-solder joint ye-chip ngokusekelwe kwiphakheji yesiseko segranite lincitshisiwe ngama-70% xa kuthelekiswa nephakheji yesiseko yendabuko, kwaye uzinzo lokusebenza kwe-chip luphuculwe kakhulu.
Njengoko iteknoloji ye-semiconductor iqhubeka ihambela phambili ukuya kumgangatho ophezulu kunye nobukhulu obuncinci, iimfuno zokulawula uxinzelelo lobushushu kwiipakethe ze-wafer ziya zisiba nzima ngakumbi. Iziseko zegranite, kunye neenzuzo zazo ezipheleleyo kwi-coefficient yokwandiswa kobushushu obuphantsi, uzinzo lobushushu kunye nokunciphisa ukungcangcazela, ziye zaba lukhetho oluphambili lokuphucula umgangatho wepakethe ye-wafer kunye nokunciphisa impembelelo yoxinzelelo lobushushu. Zidlala indima ebaluleke ngakumbi ekuqinisekiseni uphuhliso oluzinzileyo lweshishini le-semiconductor.
Ixesha leposi: Meyi-15-2025