Kwinkqubo yokwenziwa kwe-semiconductor echanekileyo kunye neyinkimbinkimbi yokupakishwa kwe-wafer, uxinzelelo lwe-thermal lufana "nomtshabalalisi" ofihliweyo ebumnyameni, ehlala esongela umgangatho wokupakisha kunye nokusebenza kweechips. Ukususela kumahluko kwi-coefficients yokwandiswa kwe-thermal phakathi kwee-chips kunye nezinto zokupakisha kwiinguqu ezinzulu zokushisa ngexesha lokupakisha, iindlela zesizukulwana soxinzelelo lwe-thermal ziyahlukahlukana, kodwa zonke zikhomba umphumo wokunciphisa izinga lesivuno kunye nokuchaphazela ukuthembeka kwexesha elide le-chips. Isiseko se-granite, esineempawu ezikhethekileyo zezinto eziphathekayo, ngokuthula sibe "ngumncedisi" onamandla ekujonganeni nengxaki yoxinzelelo lwe-thermal.
Ingxaki yoxinzelelo lwe-thermal kwipakethe ye-wafer
Ukupakishwa kweWafer kubandakanya umsebenzi wentsebenziswano wezinto ezininzi. Iichips ziqhele ukwenziwa ngezinto zesemiconductor ezifana nesilicon, ngelixa izinto zokupakisha njengezinto zokupakisha zeplastiki kunye ne-substrates zahluka kumgangatho. Xa ubushushu buguquka ngexesha lenkqubo yokupakisha, izinto ezahlukeneyo ziyahluka kakhulu kwiqondo lokwandiswa kwe-thermal kunye nokunciphisa ngenxa yokwahlukana okuphawulekayo kwi-coefficient yokwanda kwe-thermal (CTE). Ngokomzekelo, i-coefficient yokwandiswa kwe-thermal ye-silicon chips malunga ne-2.6 × 10⁻⁶/℃, ngelixa i-coefficient yokwandiswa kwe-thermal yezinto eziqhelekileyo zokubumba i-epoxy resin iphezulu njenge-15-20 × 10⁻⁶/℃. Lo msantsa mkhulu ubangela ukuba idigri ye-shrinkage ye-chip kunye nempahla yokupakisha ibe yi-asynchronous ngexesha lokupholisa emva kokupakishwa, ivelisa uxinzelelo olunamandla lobushushu kumdibaniso phakathi kwezi zimbini. Ngaphantsi komphumo oqhubekayo woxinzelelo lwe-thermal, i-wafer inokujika kwaye iguqule. Kwiimeko ezimandundu, kunokubangela iziphene ezibulalayo ezinje ngokuqhekeka kwetshiphu, ukwaphuka kwamalungu e-solder, kunye ne-interface delamination, okukhokelela kumonakalo ekusebenzeni kombane wetshiphu kunye nokuncipha okubonakalayo kubomi bayo benkonzo. Ngokweenkcukacha-manani zemizi-mveliso, izinga elinesiphene lokupakishwa kwe-wafer okubangelwa yimiba yoxinzelelo lwe-thermal linokuba phezulu ukuya kutsho kwi-10% ukuya kwi-15%, ibe ngumba ongundoqo othintela uphuhliso olusebenzayo noluphezulu lweshishini le-semiconductor.
Iinzuzo zeempawu zeziseko zegranite
I-coefficient ephantsi yokwandiswa kwe-thermal: I-Granite iqulunqwe kakhulu ngamakristali amaminerali afana ne-quartz kunye ne-feldspar, kwaye i-coefficient yayo yokwandiswa kwe-thermal iphantsi kakhulu, ngokuqhelekileyo isuka kwi-0.6 ukuya kwi-5 × 10⁻⁶/℃, ekufutshane naleyo ye-silicon chips. Olu phawu lwenza ukuba ngexesha lokusebenza kwezixhobo zokupakisha ze-wafer, naxa udibana nokuguquguquka kweqondo lokushisa, umahluko ekwandeni kwe-thermal phakathi kwesiseko segranite kunye ne-chip kunye nezinto zokupakisha ziyancipha kakhulu. Umzekelo, xa ubushushu buguquka nge-10℃, ukuhluka kobungakanani beqonga lokupakisha elakhiwe kwisiseko segranite kunokuncitshiswa ngaphezulu kwe-80% xa kuthelekiswa nesiseko sesinyithi semveli, esinciphisa kakhulu uxinzelelo lwe-thermal olubangelwa kukwandiswa kwe-asynchronous thermal kunye nokucutheka, kwaye ibonelela ngemeko yokuxhasa ezinzile kwiwafer.
Uzinzo olugqwesileyo lwe-thermal: I-Granite inozinzo olubalaseleyo lwe-thermal. Ubume bayo bangaphakathi buxinene, kwaye iikristale ziboshwe ngokusondeleyo ngokusebenzisa i-ionic kunye ne-covalent bonds, evumela ukuqhutyelwa kobushushu obucothayo ngaphakathi. Xa izixhobo zokupakisha zihamba kwimijikelezo enzima yokushisa, isiseko segranite sinokucinezela ngokufanelekileyo impembelelo yokutshintsha kweqondo lokushisa ngokwalo kwaye sigcine intsimi yokushisa ezinzileyo. Iimvavanyo ezifanelekileyo zibonisa ukuba phantsi kweqondo lokutshintsha kobushushu obuqhelekileyo bezixhobo zokupakisha (ezifana ne-± 5 ℃ ngomzuzu), ukuphambuka kokulingana kobushushu bomphezulu besiseko segranite kunokulawulwa ngaphakathi kwe-± 0.1 ℃, kuthintelwe into yokuxinana koxinzelelo lwe-thermal olubangelwa kukwahluka kobushushu bendawo, ukuqinisekisa ukuba i-wafer ikwimo engqongileyo yokusingqongileyo kunye nenkqubo yokunciphisa i-pack kunye ne-stable kwi-pack. ukuvelisa uxinzelelo.
Ukuqina okuphezulu kunye nokuntywila kwe-vibration: Ngexesha lokusebenza kwezixhobo zokupakisha ze-wafer, iindawo ezihamba ngoomatshini ngaphakathi (ezinje ngeenjini, izixhobo zokuhambisa, njl.njl.) ziya kuvelisa ukungcangcazela. Ukuba ezi ntshukumo zithunyelwa kwi-wafer, ziya kuqinisa umonakalo obangelwa kuxinzelelo lwe-thermal kwi-wafer. Iziseko ze-Granite zinobunzima obuphezulu kunye nobunzima obuphezulu kunobuninzi bezinto zetsimbi, ezinokuthi zixhathise ngokufanelekileyo ukuphazanyiswa kwee-vibrations zangaphandle. Ngeli xesha, ubume bayo obukhethekileyo bangaphakathi buyenza isebenze ngokugqwesa ukungcangcazela kwaye iyenze ikwazi ukuchitha amandla okungcangcazela ngokukhawuleza. Idatha yophando ibonisa ukuba isiseko segranite sinokunciphisa ukunyakaza okuphezulu (100-1000Hz) okwenziwe ngokusebenza kwezixhobo zokupakisha nge-60% ukuya kwi-80%, ukunciphisa kakhulu umphumo wokudibanisa ukungcangcazela kunye noxinzelelo lwe-thermal, kunye nokuqinisekisa ngakumbi ukuchaneka okuphezulu kunye nokuthembeka okuphezulu kokupakishwa kwe-wafer.
Isiphumo esisebenzayo sosetyenziso
Kumgca wemveliso yokupakishwa kwe-wafer yeshishini lokuvelisa i-semiconductor eyaziwayo, emva kokwazisa izixhobo zokupakisha ezineziseko zegranite, impumelelo ephawulekayo yenziwe. Ngokusekwe kuhlalutyo lwedatha yokuhlola yee-wafers ezingama-10,000 emva kokupakishwa, ngaphambi kokwamkela isiseko segranite, izinga lesiphako se-wafer warping ebangelwa luxinzelelo lwe-thermal yi-12%. Nangona kunjalo, emva kokutshintshela kwisiseko se-granite, izinga lesiphako lehla ngokukhawuleza ukuya kwi-3%, kwaye izinga lesivuno liphuculwe kakhulu. Ngaphezu koko, iimvavanyo zokuthembeka kwexesha elide zibonise ukuba emva kwemijikelo ye-1,000 yobushushu obuphezulu (125 ℃) kunye nobushushu obuphantsi (-55 ℃), inani lokungaphumeleli kwe-solder ye-chip esekelwe kwi-package yesiseko se-granite liye lancitshiswa nge-70% xa kuthelekiswa nephakheji yesiseko yendabuko, kwaye ukuzinza kwe-chip kuphuculwe kakhulu.
Njengoko itekhnoloji ye-semiconductor iqhubeka nokuhambela phambili ekuchanekeni okuphezulu kunye nobukhulu obuncinci, iimfuno zolawulo loxinzelelo lwe-thermal kwipakethe ye-wafer ziya ziba ngqongqo. Iziseko ze-Granite, kunye neenzuzo zabo ezibanzi kwi-coefficient ephantsi yokwandiswa kwe-thermal, ukuzinza kwe-thermal kunye nokunciphisa i-vibration, ibe yinto ekhethiweyo yokuphucula umgangatho wokupakishwa kwe-wafer kunye nokunciphisa impembelelo yoxinzelelo lwe-thermal. Badlala indima ekhulayo ekuqinisekiseni uphuhliso oluzinzileyo lweshishini le-semiconductor.
Ixesha lokuposa: May-15-2025