Kwintsimi yokwenziwa kwe-semiconductor, ukuchaneka kuyindlela yokuphila yomgangatho wemveliso kunye nokusebenza. Izixhobo zokulinganisa i-semiconductor, njengekhonkco eliphambili lokuqinisekisa ukuchaneka kwemveliso, ibeka iimfuno eziphantse zibe ngqongqo ekuzinzeni kwamacandelo ayo angundoqo. Phakathi kwabo, iqonga legranite, elinozinzo olubalaseleyo lwe-thermal, lidlala indima ebaluleke kakhulu kwisixhobo sokulinganisa i-semiconductor. Eli nqaku liza kuqhuba uhlalutyo olunzulu lwe-thermal stability performance of granite platforms in semiconductor metering equipment ngokusebenzisa idatha yovavanyo lwangempela.
Iimfuno ezingqongqo zokuzinza kwe-thermal yezixhobo zokulinganisa kwi-semiconductor yokuvelisa
Inkqubo yokuvelisa i-semiconductor inzima kakhulu kwaye ichanekile, kwaye ububanzi bemigca yesekethe kwi-chip ingene kwinqanaba le-nanometer. Kwinkqubo yokuvelisa echanekileyo ephezulu, nolona tshintsho luncinci lobushushu lunokubangela ukwanda kwe-thermal kunye nokucutha kwezixhobo zezixhobo, ngaloo ndlela kubangele iimpazamo zokulinganisa. Ngokomzekelo, kwinkqubo ye-photolithography, ukuba ukuchaneka kokulinganisa kwesixhobo sokulinganisa i-nanometer 1, kunokubangela iingxaki ezinzulu ezifana neesekethe ezimfutshane okanye iisekethe ezivulekileyo kwiisekethe kwi-chip, ekhokelela ekukhutshweni kwe-chip. Ngokweenkcukacha-manani zedatha yoshishino, kwi-1℃ nganye yokuguquguquka kweqondo lobushushu, iqonga lesixhobo semitha yemathiriyeli yentsimbi yesiko linokutshintsha ubungakanani beenanometer ezininzi. Nangona kunjalo, ukuveliswa kwe-semiconductor kufuna ukuchaneka kokulinganisa ukuba kulawulwe ngaphakathi kwe-± 0.1 nanometers, okwenza ukuzinza kwe-thermal ibe yinto ephambili ekunqumeni ukuba isixhobo sokulinganisa imitha sinokuhlangabezana neemfuno zokwenziwa kwe-semiconductor.
Iinzuzo zethiyori zokuzinza kwe-thermal yamaqonga egranite
I-Granite, njengohlobo lwamatye endalo, ine-crystallization yangaphakathi yangaphakathi, i-dense kunye nesakhiwo esifanayo, kwaye inenzuzo yendalo yokuzinza kwe-thermal. Ngokubhekiselele kwi-coefficient yokwandiswa kwe-thermal, i-coefficient yokwandiswa kwe-thermal ye-granite iphantsi kakhulu, ngokubanzi ukusuka kwi-4.5 ukuya kwi-6.5 × 10⁻⁶/K. Ngokwahlukileyo, i-coefficient yokwandiswa kwe-thermal yezinto eziqhelekileyo zetsimbi ezifana ne-aluminium alloys iphezulu njenge-23.8×10⁻⁶/K, ephindwe kaninzi kune-granite. Oku kuthetha ukuba phantsi kweemeko ezifanayo zokutshintsha kweqondo lokushisa, ukuguqulwa kwe-dimensional yeqonga legranite lincinci kakhulu kuneqonga lensimbi, elinokubonelela ngereferensi yokulinganisa okuzinzile kwisixhobo sokulinganisa i-semiconductor.
Ukongeza, ubume bekristale begranite bunika ukufana okugqwesileyo kokuqhuba ubushushu. Xa umsebenzi wesixhobo uvelisa ubushushu okanye utshintsho lwamaqondo obushushu, iqonga legranite linokukhawuleza kwaye ngokulinganayo liqhube ubushushu, linqande ukufudumeza kwendawo okanye ukupholiseka okukhulu, ngaloo ndlela ligcina ngokufanelekileyo ukuhambelana kobushushu beqonga kunye nokuqinisekisa ngakumbi ukuzinza komlinganiselo wokuchaneka.
Inkqubo kunye nendlela yokulinganisa ukuzinza kwe-thermal
Ukuze uvavanye ngokuchanekileyo uzinzo lwe-thermal yeqonga legranite kwisixhobo sokulinganisa i-semiconductor, siye sayila iskimu somlinganiselo ongqongqo. Khetha isixhobo sokulinganisa i-wafer ye-semiconductor echanekileyo ephezulu, exhotyiswe ngeqonga legranite elicwangcisiweyo eliphezulu. Kwimeko-bume yovavanyo, uluhlu oluqhelekileyo lokutshintsha kobushushu kwindawo yokusebenzela yokwenziwa kwe-semiconductor luye lwalinganiswa, oko kukuthi, ukufudumeza ngokuthe ngcembe ukusuka kwi-20℃ ukuya kwi-35℃ kwaye emva koko kuphole kubuyele kwi-20℃. Yonke le nkqubo ithathe iiyure ezisi-8.
Kwiqonga legranite lesixhobo sokulinganisa, iiwafers zesilicon ezichanekileyo ezikumgangatho ophezulu zibekwe, kwaye izinzwa zokufuduswa ezinokuchaneka kwe-nanoscale zisetyenziselwa ukubeka esweni utshintsho lwendawo ehambelanayo phakathi kweewafers zesilicon kunye neqonga ngexesha langempela. Okwangoku, iisensonsi zobushushu ezichanekileyo ezichanekileyo zicwangciswe kwiindawo ezahlukeneyo eqongeni ukujonga ukuhanjiswa kweqondo lobushushu kwindawo yeqonga. Ngethuba lovavanyo, idatha yokufuduka kunye nedatha yeqondo lokushisa zirekhodwa yonke imizuzu ye-15 ukuqinisekisa ukuphelela kunye nokuchaneka kwedatha.
Idatha elinganisiweyo kunye nohlalutyo lweziphumo
Ubudlelwane phakathi kokutshintsha kobushushu kunye nokutshintsha kobungakanani beqonga
Idatha yovavanyo ibonisa ukuba xa ubushushu bunyuka ukusuka kwi-20℃ ukuya kwi-35℃, utshintsho kubungakanani bomgca weqonga legranite lincinci kakhulu. Emva kokubala, kuyo yonke inkqubo yokufudumeza, ubuninzi bokwandiswa komgca weqonga yi-0.3 nanometers kuphela, ephantsi kakhulu kunoluhlu lokunyamezela impazamo ukuchaneka komlinganiselo kwiinkqubo zokuvelisa i-semiconductor. Ngexesha lokupholisa, ubungakanani beqonga buphantse bubuyele ngokupheleleyo kwisimo sokuqala, kwaye i-lag phenomenon yokutshintsha ubungakanani inokungahoywa. Olu phawu lokugcina utshintsho oluphantsi kakhulu lwe-dimensional naphantsi kokuguquguquka okubalulekileyo kobushushu luqinisekisa ngokupheleleyo uzinzo olubalaseleyo lobushushu beqonga legranite.
Uhlalutyo lokufana kweqondo lokushisa kwindawo yesikhulumi
Idatha eqokelelwe yi-sensor yeqondo lokushisa ibonisa ukuba ngexesha lokusebenza kwezixhobo kunye nenkqubo yokutshintsha kweqondo lokushisa, ukuhanjiswa kweqondo lokushisa phezu kweqonga legranite lifana kakhulu. Nokuba ngexesha lenqanaba xa ubushushu butshintsha kakhulu, umahluko weqondo lobushushu phakathi kwendawo nganye yokulinganisa kumphezulu weqonga uhlala ulawulwa ngaphakathi ± 0.1℃. Ukusasazwa kobushushu obufanayo kuthintela ngokufanelekileyo ukuguqulwa kweqonga okubangelwa kuxinzelelo lwe-thermal olungalinganiyo, ukuqinisekisa ukuba tyaba kunye nokuzinza komphezulu wesalathiso somlinganiselo, kunye nokubonelela ngendawo yokulinganisa ethembekileyo yezixhobo ze-semiconductor metrology.
Xa kuthelekiswa namaqonga izinto zemveli
Idatha elinganisiweyo yeplatifti yegranite yafaniswa kunye nezixhobo zemitha ye-semiconductor yohlobo olufanayo usebenzisa i-platform ye-aluminium alloy, kwaye umehluko wawubalulekile. Ngaphantsi kweemeko ezifanayo zokutshintsha kweqondo lokushisa, ukwandiswa komgca weqonga le-aluminium alloy liphezulu njenge-2.5 nanometers, elingaphezu kwezihlandlo ezisibhozo kwiqonga legranite. Okwangoku, ukuhanjiswa kweqondo lokushisa kwi-platform ye-aluminium alloy ayilingani, kunye nomlinganiselo ophezulu wokushisa ufikelela kwi-0.8 ℃, okubangela ukuguqulwa okucacileyo kweqonga kunye nokuchaphazela ngokunzulu ukuchaneka komlinganiselo.
Kwihlabathi elichanekileyo lezixhobo ze-semiconductor metrology, iiplatifomu zegranite, kunye nokuzinza kwazo okubalaseleyo kwe-thermal, ziye zaba ngundoqo ekuqinisekiseni ukuchaneka komlinganiselo. Idatha elinganisiweyo ingqina ngamandla ukusebenza okugqwesileyo kweqonga legranite ekuphenduleni utshintsho lobushushu, libonelela ngenkxaso yobugcisa ethembekileyo kushishino lokwenziwa kwesemiconductor. Njengoko iinkqubo zokwenziwa kwe-semiconductor zihambela phambili ekuchanekeni okuphezulu, inzuzo yozinzo lwe-thermal yamaqonga egranite iya kuphawuleka ngakumbi, iqhubeleka ngokuqhubekayo ukusungula ubuchwepheshe kunye nophuhliso kwishishini.
Ixesha lokuposa: May-13-2025