Kwicandelo lokwenziwa kwee-semiconductor, ukuchaneka yindlela yokuphila yomgangatho wemveliso kunye nokusebenza kwayo. Izixhobo zokulinganisa ii-semiconductor, njengekhonkco eliphambili lokuqinisekisa ukuchaneka kwemveliso, zibeka iimfuno ezingqongqo kakhulu kuzinzo lwezixhobo zayo eziphambili. Phakathi kwazo, iqonga le-granite, elinozinzo olubalaseleyo lobushushu, lidlala indima ebalulekileyo kwizixhobo zokulinganisa ii-semiconductor. Eli nqaku liza kuqhuba uhlalutyo olunzulu lokusebenza kozinzo lobushushu lweeqonga ze-granite kwizixhobo zokulinganisa ii-semiconductor ngokusebenzisa idatha yovavanyo yokwenyani.
Iimfuneko ezingqongqo zozinzo lobushushu bezixhobo zokulinganisa kwimveliso ye-semiconductor
Inkqubo yokwenziwa kwe-semiconductor iyinkimbinkimbi kakhulu kwaye ichanekile, kwaye ububanzi bemigca yesekethe kwi-chip bungene kwinqanaba le-nanometer. Kwinkqubo yokwenziwa echanekileyo kangaka, nokuba utshintsho oluncinci lobushushu lunokubangela ukwanda kobushushu kunye nokucutheka kwezixhobo zezixhobo, ngaloo ndlela kubangele iimpazamo zokulinganisa. Umzekelo, kwinkqubo ye-photolithography, ukuba ukuchaneka kokulinganisa kwezixhobo zokulinganisa kudlula nge-nanometer e-1, kunokubangela iingxaki ezinkulu ezifana neesekethe ezimfutshane okanye iisekethe ezivulekileyo kwiisekethe kwi-chip, okukhokelela ekukhutsheni kwe-chip. Ngokwezibalo zedatha yeshishini, kuyo yonke i-1℃ yokutshintsha kobushushu, iqonga lesixhobo sokulinganisa sezinto zesinyithi lendabuko linokutshintsha ubukhulu bee-nanometers ezininzi. Nangona kunjalo, ukuveliswa kwe-semiconductor kufuna ukuchaneka kokulinganisa kulawulwe ngaphakathi kwee-nanometers ze-±0.1, okwenza uzinzo lobushushu lube yinto ephambili ekumiseleni ukuba izixhobo zokulinganisa zinokuhlangabezana neemfuno zokwenziwa kwe-semiconductor.
Iingenelo zethiyori zokuzinza kobushushu kwamaqonga egranite
I-Granite, njengohlobo lwelitye lendalo, ine-crystallization encinci yangaphakathi yeminerali, isakhiwo esixineneyo nesifanayo, kwaye inenzuzo yendalo yokuzinza kobushushu. Ngokuphathelele i-coefficient yokwandiswa kobushushu, i-coefficient yokwandiswa kobushushu ye-granite iphantsi kakhulu, ngokubanzi isusela kwi-4.5 ukuya kwi-6.5×10⁻⁶/K. Ngokwahlukileyo koko, i-coefficient yokwandiswa kobushushu bezinto eziqhelekileyo zesinyithi ezifana nee-aluminium alloys iphezulu njenge-23.8×10⁻⁶/K, ephindwe kaninzi kune-granite. Oku kuthetha ukuba phantsi kweemeko ezifanayo zokutshintsha kobushushu, utshintsho lobukhulu beqonga le-granite luncinci kakhulu kunolo lweqonga lesinyithi, elinokubonelela ngereferensi yokulinganisa ezinzileyo kwizixhobo zokulinganisa ze-semiconductor.
Ukongeza, ulwakhiwo lwekristale lwegranite luyinika ukuhambelana okuhle kokuqhuba ubushushu. Xa ukusebenza kwesixhobo kuvelisa ubushushu okanye utshintsho lobushushu obujikeleze umhlaba, iqonga legranite linokuhambisa ubushushu ngokukhawuleza nangokulinganayo, liphephe ubushushu obugqithisileyo okanye ukupholisa kakhulu, ngaloo ndlela ligcina ubushushu obupheleleyo beqonga buhambelana kwaye liqinisekisa ngakumbi uzinzo lokuchaneka kokulinganisa.
Inkqubo kunye nendlela yokulinganisa uzinzo lobushushu
Ukuze sivavanye ngokuchanekileyo uzinzo lobushushu lweqonga legranite kwizixhobo zokulinganisa i-semiconductor, siyile iskimu sokulinganisa esiqatha. Khetha isixhobo sokulinganisa i-wafer ye-semiconductor esichanekileyo kakhulu, esixhotyiswe ngeqonga legranite elicwangciswe kakuhle kakhulu. Kwimeko yovavanyo, uluhlu lokutshintsha kobushushu oluqhelekileyo kwindawo yokusebenzela yokuvelisa i-semiconductor luye lwalinganiswa, oko kukuthi, ukufudumeza kancinci kancinci ukusuka kwi-20℃ ukuya kwi-35℃ kwaye emva koko kuphola kubuyele kwi-20℃. Yonke le nkqubo yathatha iiyure ezi-8.
Kwiqonga legranite lesixhobo sokulinganisa, kubekwa ii-wafers ze-silicon ezisemgangathweni ophezulu, kwaye ii-displacement sensors ezine-nanoscale accuracy zisetyenziselwa ukujonga utshintsho lwendawo phakathi kwee-wafers ze-silicon kunye neqonga ngexesha langempela. Okwangoku, ii-sensors ezininzi ze-high-precision temperature sensors zibekwe kwiindawo ezahlukeneyo kwiqonga ukujonga ukusasazwa kobushushu kumphezulu weqonga. Ngexesha lovavanyo, idatha ye-displacement kunye nedatha ye-temperature yarekhodwa rhoqo emva kwemizuzu eli-15 ukuqinisekisa ukugqibelela nokuchaneka kwedatha.
Idatha elinganisiweyo kunye nohlalutyo lweziphumo
Ubudlelwane phakathi kotshintsho lobushushu kunye notshintsho lobungakanani beqonga
Idatha yovavanyo ibonisa ukuba xa ubushushu bunyuka ukusuka kwi-20℃ ukuya kwi-35℃, utshintsho kubukhulu obucwangcisiweyo beqonga legranite luncinci kakhulu. Emva kokubala, kuyo yonke inkqubo yokufudumeza, ulwandiso olucwangcisiweyo oluphezulu lweqonga yi-0.3 nanometers kuphela, oluphantsi kakhulu kunoluhlu lokunyamezela iimpazamo zokuchaneka kokulinganisa kwiinkqubo zokuvelisa i-semiconductor. Ngexesha lesigaba sokupholisa, ubungakanani beqonga bunokubuyela phantse ngokupheleleyo kwimeko yokuqala, kwaye isiganeko sokulibaziseka sokutshintsha kobukhulu sinokungahoywa. Olu phawu lokugcina utshintsho oluphantsi kakhulu nangona kuphantsi kokuguquguquka okukhulu kobushushu luqinisekisa ngokupheleleyo uzinzo olubalaseleyo lobushushu beqonga legranite.
Uhlalutyo lokufana kobushushu kumphezulu weqonga
Idatha eqokelelwe sisiva-bushushu ibonisa ukuba ngexesha lokusebenza kwezixhobo kunye nenkqubo yokutshintsha kobushushu, ukusasazwa kobushushu kumphezulu weqonga legranite kufana kakhulu. Kwanakwinqanaba apho ubushushu butshintsha kakhulu, umahluko wobushushu phakathi kwendawo nganye yokulinganisa kumphezulu weqonga uhlala ulawulwa ngaphakathi kwe-±0.1℃. Ukusasazwa kobushushu obufanayo kuthintela ngokufanelekileyo ukuguquguquka kweqonga okubangelwa kuxinzelelo lobushushu olungalinganiyo, kuqinisekisa ukuba umphezulu wereferensi yokulinganisa uthambile kwaye uzinzo, kwaye kubonelela ngendawo yokulinganisa ethembekileyo yezixhobo ze-semiconductor metrology.
Xa kuthelekiswa namaqonga ezinto zemveli
Idatha elinganisiweyo yeqonga legranite ithelekiswe neyezixhobo zokulinganisa ze-semiconductor zohlobo olufanayo ezisebenzisa iqonga le-aluminium alloy, kwaye umahluko wawubalulekile. Phantsi kweemeko ezifanayo zokutshintsha kobushushu, ulwandiso oluthe tye lweqonga le-aluminium alloy luphezulu njengee-nanometers ezingama-2.5, olungaphezulu kwezihlandlo ezisibhozo kuneqonga le-granite. Okwangoku, ukusasazwa kobushushu kumphezulu weqonga le-aluminium alloy akulingani, umahluko ophezulu wobushushu ufikelela kwi-0.8℃, nto leyo ekhokelela ekuguqukeni okucacileyo kweqonga kwaye ichaphazela kakhulu ukuchaneka kokulinganisa.
Kwihlabathi elichanekileyo lezixhobo ze-semiconductor metrology, amaqonga e-granite, kunye nozinzo lwawo olubalaseleyo lobushushu, abe sisiseko sokuqinisekisa ukuchaneka kokulinganisa. Idatha elinganisiweyo ingqina ngamandla ukusebenza okugqwesileyo kweqonga le-granite ekuphenduleni utshintsho lobushushu, inika inkxaso yobugcisa ethembekileyo kwishishini lokuvelisa i-semiconductor. Njengoko iinkqubo zokuvelisa i-semiconductor ziqhubela phambili ekuchanekeni okuphezulu, inzuzo yozinzo lobushushu yamaqonga e-granite iya kuba yinto ephawulekayo ngakumbi, iqhubela phambili uphuhliso lobuchwepheshe kunye nophuhliso kwishishini.
Ixesha leposi: Meyi-13-2025