1. Ukuchaneka kobukhulu
Ukuthamba: ukuthamba komphezulu wesiseko kufuneka kufikelele kumgangatho ophezulu kakhulu, kwaye impazamo yokuthamba akufuneki idlule kwi-±0.5μm kuyo nayiphi na indawo ye-100mm×100mm; Kwindawo yonke yesiseko, impazamo yokuthamba ilawulwa ngaphakathi kwe-±1μm. Oku kuqinisekisa ukuba izinto eziphambili zezixhobo ze-semiconductor, ezifana nentloko yokuvezwa kwezixhobo ze-lithography kunye netafile yeprobe yezixhobo zokufumanisa iitshiphusi, zinokufakwa ngokuzinzileyo kwaye zisebenze kwi-plane echanekileyo kakhulu, ukuqinisekisa ukuchaneka kwendlela yokukhanya kunye noqhagamshelo lwesekethe yesixhobo, kwaye kuthintelwe ukuphambuka kokufuduka kwezinto okubangelwa yi-plane engalinganiyo yesiseko, echaphazela ukuveliswa kweetshiphusi ze-semiconductor kunye nokuchaneka kokufunyanwa.
Ukuthe tye: Ukuthe tye komphetho ngamnye wesiseko kubalulekile. Kwicala lobude, impazamo yokuthe tye mayingadluli kwi-±1μm nge-1m nganye; Impazamo yokuthe tye ethe tyaba ilawulwa ngaphakathi kwe-±1.5μm. Ukuthatha umatshini we-lithography ochanekileyo njengomzekelo, xa itafile ihamba ecaleni kwereyile yesikhokelo sesiseko, ukuthe tye komphetho wesiseko kuchaphazela ngokuthe ngqo ukuchaneka kwendlela yetafile. Ukuba ukuthe tye akuhambelani nomgangatho, ipateni ye-lithography iya kugqwethwa kwaye iguqulwe, nto leyo ekhokelela ekunciphiseni isivuno sokwenziwa kweetshiphusi.
Ukuhambelana: Impazamo yokufana kwezinto eziphezulu nezisezantsi zesiseko kufuneka ilawulwe ngaphakathi kwe-±1μm. Ukuhambelana okuhle kunokuqinisekisa uzinzo lweziko lonke lomxhuzulane emva kokufakwa kwesixhobo, kwaye amandla ecandelo ngalinye ayafana. Kwizixhobo zokwenza i-wafer ye-semiconductor, ukuba iindawo eziphezulu nezisezantsi zesiseko azifani, i-wafer iya kuthambekela ngexesha lokucubungula, ichaphazele ukufana kwenkqubo efana nokugrumba kunye nokwaleka, ngaloo ndlela ichaphazele ukuhambelana kokusebenza kwe-chip.
Okwesibini, iimpawu zezinto eziphathekayo
Ubunzima: Ubunzima bezinto ezisisiseko segranite kufuneka bufikelele kwi-Shore hardness HS70 okanye ngaphezulu. Ubunzima obuphezulu bunokumelana ngempumelelo nokuguguleka okubangelwa kukuhamba rhoqo kunye nokungqubana kwezinto ngexesha lokusebenza kwezixhobo, ukuqinisekisa ukuba isiseko sinokugcina ubungakanani obuchanekileyo emva kokusetyenziswa ixesha elide. Kwizixhobo zokupakisha iitshiphusi, ingalo yerobhothi ihlala ibamba kwaye ibeke itshiphusi kwisiseko, kwaye ubunzima obuphezulu besiseko bunokuqinisekisa ukuba umphezulu awulula ukuvelisa imikrwelo kwaye ugcine ukuchaneka kwentshukumo yengalo yerobhothi.
Uxinano: Uxinano lwezinto kufuneka lube phakathi kwe-2.6-3.1 g/cm³. Uxinano olufanelekileyo lwenza isiseko sibe nozinzo olusemgangathweni, olunokuqinisekisa ukuqina okwaneleyo ukuxhasa izixhobo, kwaye aluyi kuzisa ubunzima ekufakweni nasekuthuthweni kwezixhobo ngenxa yobunzima obugqithisileyo. Kwizixhobo zokuhlola ze-semiconductor ezinkulu, uxinano oluzinzileyo lwesiseko lunceda ekunciphiseni ukudluliselwa kokungcangcazela ngexesha lokusebenza kwezixhobo kunye nokuphucula ukuchaneka kokufunyanwa.
Uzinzo lobushushu: i-coefficient yokwandisa umbane ethe tye ingaphantsi kwe-5×10⁻⁶/℃. Izixhobo ze-semiconductor zinovelwano kakhulu kutshintsho lobushushu, kwaye uzinzo lobushushu lwesiseko lunxulumene ngokuthe ngqo nokuchaneka kwesixhobo. Ngexesha lenkqubo ye-lithography, ukuguquguquka kobushushu kunokubangela ukwanda okanye ukucutheka kwesiseko, okubangela ukuphambuka kubungakanani bepateni yokuvezwa. Isiseko se-granite esine-coefficient yokwandisa umbane ethe tye sinokulawula utshintsho lobungakanani kuluhlu oluncinci kakhulu xa ubushushu bokusebenza kwesixhobo butshintsha (ngokubanzi yi-20-30 ° C) ukuqinisekisa ukuchaneka kwe-lithography.
Okwesithathu, umgangatho womphezulu
Uburhabaxa: Uburhabaxa bomphezulu Ixabiso leRa kwisiseko alidluli kwi-0.05μm. Umphezulu ogudileyo kakhulu unokunciphisa ukufunxwa kothuli kunye nokungcola kwaye unciphise impembelelo ekucocekeni kwendawo yokwenziwa kweetshiphusi ze-semiconductor. Kwindawo yokusebenzela engenaluthuli yokwenziwa kweetshiphusi, amasuntswana amancinci anokubangela iziphene ezifana nokujikeleza okufutshane kwetshiphusi, kwaye umphezulu ogudileyo wesiseko unceda ukugcina indawo yokusebenzela icocekile kwaye kuphuculwe isivuno setshiphusi.
Iziphene zeMicroscopic: Umphezulu wesiseko awuvumelekanga ukuba ube nemingxunya ebonakalayo, imingxunya yesanti, iimbobo kunye nezinye iziphene. Kwinqanaba lemicroscope, inani leziphene ezinobubanzi obungaphezulu kwe-1μm ngesentimitha yesikwere aliyi kudlula i-3 nge-electron microscopy. Ezi ziphene ziya kuchaphazela amandla esakhiwo kunye nokuthamba komphezulu wesiseko, kwaye emva koko zichaphazele ukuzinza kunye nokuchaneka kwezixhobo.
Okwesine, uzinzo kunye nokumelana nomothuko
Uzinzo olutshintshatshintshayo: Kwindawo yokungcangcazela eyenziwe kukusebenza kwezixhobo ze-semiconductor (uluhlu lwefrikhwensi yokungcangcazela yi-10-1000Hz, ubukhulu be-amplitude yi-0.01-0.1mm), ukushukuma kweendawo eziphambili zokufaka kwisiseko kufuneka kulawulwe ngaphakathi kwe-±0.05μm. Ukuthatha izixhobo zovavanyo lwe-semiconductor njengomzekelo, ukuba ukungcangcazela kwesixhobo kunye nokungcangcazela kwendawo engqongileyo kudluliselwa kwisiseko ngexesha lokusebenza, ukuchaneka kwesignali yovavanyo kunokuphazamiseka. Uzinzo oluhle olutshintshatshintshayo lunokuqinisekisa iziphumo zovavanyo ezithembekileyo.
Ukumelana ne-Seismic: Isiseko kufuneka sibe nokusebenza kakuhle kwe-seismic, kwaye sinokunciphisa ngokukhawuleza amandla okungcangcazela xa siphantsi kokungcangcazela kwangaphandle ngequbuliso (njengokungcangcazela kwe-seismic wave simulation), kwaye siqinisekise ukuba indawo ehambelanayo yezinto eziphambili zesixhobo iyatshintsha ngaphakathi kwe-±0.1μm. Kwiifektri ze-semiconductor kwiindawo ezisengozini yenyikima, iziseko ezimelana nenyikima zinokukhusela ngokufanelekileyo izixhobo ze-semiconductor ezibizayo, zinciphise umngcipheko wokonakala kwezixhobo kunye nokuphazamiseka kwemveliso ngenxa yokungcangcazela.
5. Uzinzo lweekhemikhali
Ukumelana nokugqwala: Isiseko segranite kufuneka simelane nokugqwala kweekhemikhali eziqhelekileyo kwinkqubo yokwenziwa kwee-semiconductor, ezifana ne-hydrofluoric acid, i-aqua regia, njl. Emva kokucwilisa kwisisombululo se-hydrofluoric acid esine-mass fraction engama-40% iiyure ezingama-24, izinga lokulahleka komgangatho womphezulu aliyi kudlula i-0.01%; Cwilisa kwi-aqua regia (umlinganiselo womthamo we-hydrochloric acid kwi-nitric acid eyi-3:1) iiyure ezili-12, kwaye akukho zimpawu zicacileyo zokugqwala kumphezulu. Inkqubo yokwenziwa kwee-semiconductor ibandakanya iintlobo ngeentlobo zeenkqubo zokugqwala kunye nokucoca iikhemikhali, kwaye ukumelana nokugqwala okuhle kwesiseko kunokuqinisekisa ukuba ukusetyenziswa kwexesha elide kwindawo yeekhemikhali akukhukuliswa, kwaye ukuchaneka kunye nokuqina kwesakhiwo kuyagcinwa.
Ukuchasana nongcoliseko: Izinto ezisisiseko azifunxwa kakhulu zizinto ezingcolisayo eziqhelekileyo kwindawo yokuvelisa i-semiconductor, ezifana neegesi ze-organic, ii-ion ze-metal, njl. Xa zibekwe kwindawo equlethe i-10 PPM yeegesi ze-organic (umz., i-benzene, i-toluene) kunye ne-1ppm yee-ion ze-metal (umz., ii-ion ze-copper, ii-ion ze-iron) kangangeeyure ezingama-72, utshintsho lokusebenza olubangelwa kukufakwa kwezinto ezingcolisayo kumphezulu wesiseko alunamsebenzi. Oku kuthintela izinto ezingcolisayo ukuba zingafuduki ukusuka kumphezulu wesiseko ziye kwindawo yokuvelisa ii-chip kwaye zichaphazele umgangatho wee-chip.
Ixesha leposi: Matshi-28-2025