1. Ukuchaneka komgangatho
I-Flatness: i-flatness yobuso besiseko kufuneka ifikelele kumgangatho ophezulu kakhulu, kwaye impazamo ye-flatness akufanele idlule ± 0.5μm kuyo nayiphi na indawo ye-100mm × 100mm; Kuyo yonke inqwelo-moya yesiseko, impazamo ye-flatness ilawulwa ngaphakathi kwe-± 1μm. Oku kuqinisekisa ukuba amacandelo aphambili ezixhobo ze-semiconductor, njengentloko yokuvezwa kwezixhobo ze-lithography kunye netafile yeprobe yesixhobo sokubona i-chip, inokufakwa ngokuzinzileyo kwaye iqhutywe kwinqwelomoya echanekileyo, iqinisekisa ukuchaneka kwendlela yokukhanya kunye noqhagamshelwano lwesekethe yezixhobo, kwaye ugweme ukuphambuka kokuhamba kwezinto ezibangelwa isiseko se-chip kunye ne-semiconductor echaphazela isiseko esingalinganiyo kunye nokufumanisa isiseko se-chip. ukuchaneka.
Ukuthe tye: Ukuthi tye komphetho ngamnye wesiseko kubalulekile. Kwicala lobude, impazamo yokuthe tye ayiyi kudlula ±1μm nge-1m; Impazamo ye-diagonal straightness ilawulwa ngaphakathi kwe ± 1.5μm. Ukuthatha umatshini we-lithography ochanekileyo ophezulu njengomzekelo, xa itheyibhile ihamba kunye nomzila wesikhokelo wesiseko, ukuchaneka komda wesiseko kuchaphazela ngokuthe ngqo ukuchaneka kwendlela yetafile. Ukuba ukuthe tye akufikanga kumgangatho, ipateni ye-lithography iya kuphazamiseka kwaye iguqulwe, okukhokelela ekunciphiseni kwemveliso yokuvelisa i-chip.
I-Parallelism: Impazamo yokunxuswa komphezulu ongaphezulu nangaphantsi wesiseko kufuneka ilawulwe ngaphakathi kwe-±1μm. Ukuhambelana okuhle kunokuqinisekisa ukuzinza kweziko elipheleleyo lomxhuzulane emva kokufakwa kwezixhobo, kwaye amandla ecandelo ngalinye lifana. Kwisixhobo sokwenza i-wafer ye-semiconductor, ukuba iindawo eziphezulu nezisezantsi zesiseko azihambelani, i-wafer iya kuthambeka ngexesha lokusetyenzwa, ichaphazela ukufana kwenkqubo enje ngokubambisa kunye nokugquma, kwaye ngaloo ndlela ichaphazela ukusebenza kwe-chip.
Okwesibini, iimpawu eziphathekayo
Ukuqina: Ukuqina kwesiseko se-granite imathiriyeli kufuneka ifikelele kwi-Shore hardness HS70 okanye ngaphezulu. Ubunzima obuphezulu bunokumelana ngokufanelekileyo nokugqoka okubangelwa ukuhamba rhoqo kunye nokungqubuzana kwamacandelo ngexesha lokusebenza kwezixhobo, ukuqinisekisa ukuba isiseko sinokugcina ubungakanani obuchanekileyo obuchanekileyo emva kokusetyenziswa kwexesha elide. Kwisixhobo sokupakisha i-chip, ingalo yerobhothi ibamba rhoqo kwaye ibeke i-chip kwisiseko, kwaye ubunzima obuphezulu besiseko bunokuqinisekisa ukuba umphezulu akulula ukuvelisa imikrwelo kunye nokugcina ukuchaneka kwentshukumo yengalo yerobhothi.
Ubuninzi: Uxinaniso lwempahla kufuneka lube phakathi kwe-2.6-3.1 g/cm³. Uxinaniso olufanelekileyo lwenza isiseko sibe nozinzo olusemgangathweni, olunokuqinisekisa ukuqina okwaneleyo ukuxhasa izixhobo, kwaye akuyi kuzisa ubunzima ekufakeni nasekuthuthweni kwezixhobo ngenxa yobunzima obuninzi. Kwizixhobo ezinkulu zokuhlola i-semiconductor, ukuxinana kwesiseko esizinzile kunceda ukunciphisa ukuhanjiswa kwe-vibration ngexesha lokusebenza kwezixhobo kunye nokuphucula ukuchaneka kokufumanisa.
Ukuzinza kwe-Thermal: i-coefficient yokwandisa i-linear ingaphantsi kwe-5×10⁻⁶/℃. Izixhobo ze-Semiconductor zivakalelwa kakhulu kwiinguqu zeqondo lokushisa, kwaye ukuzinza kwe-thermal yesiseko kuhambelana ngokuthe ngqo nokuchaneka kwezixhobo. Ngethuba lenkqubo ye-lithography, ukuguquguquka kweqondo lokushisa kunokubangela ukwanda okanye ukuchithwa kwesiseko, okubangelwa ukuphambuka kubukhulu bepateni yokuvezwa. Isiseko se-granite esine-coefficient ephantsi yokwandiswa kwe-linear inokulawula ukuguqulwa kobungakanani kwibala elincinci kakhulu xa ubushushu bokusebenza besixhobo buguquka (ngokubanzi 20-30 ° C) ukuqinisekisa ukuchaneka kwe-lithography.
Okwesithathu, umgangatho womphezulu
Uburhabaxa: Uburhabaxa bomphezulu ixabiso leRa kwisiseko alidluli kwi-0.05μm. Umphezulu ogudileyo unokunciphisa ukufakwa kothuli kunye nokungcola kwaye unciphise impembelelo kucoceko lwemeko yokwenziwa kwetshiphu ye-semiconductor. Kwi-workshop engenathuli yokwenziwa kwe-chip, iincinci ezincinci zingakhokelela kwiziphene ezifana nesiphaluka esifutshane se-chip, kunye nomgangatho ogudileyo wesiseko unceda ukugcina indawo ecocekileyo ye-workshop kunye nokuphucula isivuno se-chip.
Iziphene zeMicroscopic: Umphezulu wesiseko awuvumelekanga ukuba ube neentanda ezibonakalayo, imingxuma yesanti, iipores kunye nezinye iziphene. Kwinqanaba le-microscopic, inani leziphene ezinobubanzi obukhulu kune-1μm ngesentimitha yesikwere aliyi kudlula i-3 nge-electron microscopy. Ezi ziphene ziya kuchaphazela amandla okwakhiwa kunye nomgangatho we-flatness wesiseko, kwaye emva koko uchaphazele ukuzinza kunye nokuchaneka kwezixhobo.
Okwesine, ukuzinza kunye nokumelana nokothuka
Ukuzinza kweDynamic: Kwimeko yokulinganisa i-vibration eyenziwa ngokusebenza kwezixhobo ze-semiconductor (uluhlu lwe-vibration frequency 10-1000Hz, i-amplitude 0.01-0.1mm), ukufuduka kwe-vibration yamanqaku abalulekileyo okunyuka kwisiseko kufuneka kulawulwe ngaphakathi kwe-± 0.05μm. Ukuthatha isixhobo sovavanyo lwe-semiconductor njengomzekelo, ukuba i-vibration yesixhobo kunye ne-vibration yemo engqongileyo idluliselwa kwisiseko ngexesha lokusebenza, ukuchaneka komqondiso wovavanyo kunokuphazamiseka. Ukuzinza okulungileyo okuguquguqukayo kunokuqinisekisa iziphumo zovavanyo oluthembekileyo.
Ukuxhathisa kwenyikima: Isiseko kufuneka sibe nokusebenza okugqwesileyo kwenyikima, kwaye sinokunciphisa ngokukhawuleza amandla okungcangcazela xa siphantsi kokungcangcazela kwangaphandle ngesiquphe (okufana nokungcangcazela kwamaza enyikima), kwaye siqinisekise ukuba indawo ehambelana nayo yamacandelo aphambili esixhobo iyatshintsha ngaphakathi kwe-±0.1μm. Kwiifektri ze-semiconductor kwiindawo ezixhatshazwa yinyikima, iziseko zokumelana nokuzamazama komhlaba zinokukhusela ngokufanelekileyo izixhobo ze-semiconductor ezibizayo, ukunciphisa umngcipheko wokulimala kwezixhobo kunye nokuphazamiseka kwemveliso ngenxa yokungcangcazela.
5. Ukuzinza kweekhemikhali
Ukuxhatshazwa kwe-Corrosion: Isiseko se-granite kufuneka simelane ne-corrosion ye-arhente yeekhemikhali eziqhelekileyo kwinkqubo yokuvelisa i-semiconductor, njenge-hydrofluoric acid, i-aqua regia, njl. Emva kokucwina kwisisombululo se-hydrofluoric acid kunye neqhekeza elikhulu le-40% kwiiyure ze-24, izinga lokulahleka komgangatho ophezulu aliyi kudlula i-0.01%; Gxila kwi-aqua regia (umlinganiselo wevolumu ye-hydrochloric acid ukuya kwi-nitric acid 3: 1) kwiiyure ze-12, kwaye akukho zimpawu ezicacileyo zokubola phezu komhlaba. Inkqubo yokuvelisa i-semiconductor ibandakanya iindlela ezahlukeneyo zokutshiza iikhemikhali kunye neenkqubo zokucoca, kwaye ukuxhathisa okulungileyo kwe-corrosion yesiseko kunokuqinisekisa ukuba ukusetyenziswa kwexesha elide kwindawo yeekhemikhali akupheli, kwaye ukuchaneka kunye nokunyaniseka kwesakhiwo kugcinwa.
Ukuchasana nongcoliseko: Isiseko semathiriyeli sinokufunxeka okuphantsi kakhulu kongcoliseko oluqhelekileyo kwindawo yokwenziwa kwesemiconductor, efana neegesi eziphilayo, ii-ion zesinyithi, njl. njl umphezulu wesiseko awunanto. Oku kuthintela ungcoliseko ekufudukeni ukusuka kumphezulu osisiseko ukuya kwindawo yokwenziwa kwetshiphu kwaye kuchaphazele umgangatho wetshiphu.
Ixesha lokuposa: Mar-28-2025