Kwinkqubo yeshishini le-semiconductor elisingise kwiinkqubo zokwenziwa kwe-nanoscale, ukusika i-wafer, njengekhonkco eliphambili kwimveliso yetshiphu, kuneemfuno ezingqongqo kakhulu zozinzo lwezixhobo. Isiseko segranite, kunye nokumelana nokungcangcazela okugqwesileyo kunye nokuzinza kwe-thermal, iye yaba yinxalenye ephambili yezixhobo zokusika i-wafer, inika isiqinisekiso esithembekileyo sokuphumeza ukuchaneka okuphezulu kunye nokusebenza okuphezulu kwe-wafer.
Iimpawu eziphezulu zokudambisa kunye ne-anti-vibration: Ukukhusela ukuchaneka kwe-nano-level cut
Xa isixhobo sokusika i-wafer sisebenza, ukujikeleza kwesantya esiphezulu se-spindle, i-vibration ye-high-frequency vibration yesixhobo sokusika, kunye ne-vibration yendalo eveliswa zizixhobo ezijikelezileyo ziya kuba nefuthe elikhulu ekuchanekeni kokusika. Ukusebenza okudambisayo kweziseko zentsimbi zemveli kulinganiselwe, okwenza kube nzima ukuthomalalisa ngokukhawuleza ukungcangcazela, okukhokelela kwi-jitter yenqanaba le-micron yezixhobo zokusika kwaye kubangele ngokuthe ngqo iziphene ezinje ngeencam ezitshiziweyo kunye neentanda kwii-wafers. Iimpawu zokudambisa eziphezulu zesiseko segranite zisombulule ngokusisiseko le ngxaki.
Iikristale zangaphakathi zamaminerali zegranite zidibene ngokusondeleyo, zenza isakhiwo sokuchithwa kwamandla endalo. Xa i-vibration idluliselwa kwisiseko, i-microstructure yayo yangaphakathi inokuguqula ngokukhawuleza amandla okungcangcazela abe yi-thermal energy, ifezekisa ukuthotywa kwe-vibration esebenzayo. Idatha yokuvavanya ibonisa ukuba phantsi kwendawo efanayo yokungcangcazela, isiseko segranite sinokunciphisa i-vibration amplitude ngaphezu kwe-90% ngaphakathi kwemizuzwana ye-0.5, ngelixa isiseko sesinyithi sifuna i-3 ukuya kwi-5 imizuzwana. Lo msebenzi ubalaseleyo wokudambisa uqinisekisa ukuba isixhobo sokusika sihlala sizinzile ngexesha lenkqubo yokusika i-nanoscale, iqinisekisa umgca ogudileyo wokusika i-wafer kunye nokunciphisa ngokufanelekileyo izinga lokuqhawula. Ngokomzekelo, kwinkqubo yokusika i-wafer ye-5nm, izixhobo ezinesiseko se-granite zingakwazi ukulawula ubungakanani be-chipping ngaphakathi kwe-10μm, engaphezulu kwe-40% ephezulu kuneyesixhobo esinesiseko sesinyithi.
I-Ultra-low coefficient yokwandiswa kwe-thermal: Ukumelana nefuthe lokutshintsha kweqondo lokushisa
Ngexesha lenkqubo yokusika i-wafer, ubushushu obuveliswa yi-friction yezixhobo zokusika, ukutshatyalaliswa kobushushu ukusuka ekusebenzeni kwexesha elide lezixhobo, kunye nokutshintsha kweqondo lokushisa kwi-workshop yonke into inokubangela ukuguqulwa kwe-thermal yezixhobo zezixhobo. I-coefficient yokwandiswa kwe-thermal yezinto zetsimbi ziphezulu (malunga ne-12 × 10⁻⁶/℃). Xa ubushushu buguquguquka nge-5 ℃, isiseko sesinyithi esinemitha ye-1 ubude sinokungena kwi-deformation ye-60μm, ebangela ukuba indawo yokusika itshintshe kwaye ichaphazele ngokunzulu ukuchaneka kokusika.
I-coefficient yokwandiswa kwe-thermal yesiseko se-granite kuphela (4-8) × 10⁻⁶/℃, engaphantsi kweyesithathu kwizinto zetsimbi. Ngaphantsi kotshintsho olufanayo lobushushu, utshintsho lwalo lobungakanani luphantse lungahoywa. Idatha elinganisiweyo yeshishini elithile lokuvelisa i-semiconductor libonisa ukuba ngexesha le-8-iyure eqhubekayo yokusika i-wafer e-high-intensity high-intensity high-intensity wafer cut, xa ubushushu be-ambient buguquguquka nge-10 ℃, indawo yokusika i-offset yesixhobo esinesiseko se-granite singaphantsi kwe-20μm, ngelixa eso sixhobo esinesiseko sesinyithi sidlula i-60μm. Oku kusebenza okuzinzileyo kwe-thermal kuqinisekisa ukuba indawo ehambelanayo phakathi kwesixhobo sokusika kunye ne-wafer ihlala ichanekile ngamaxesha onke. Naphantsi kokusebenza kwexesha elide eliqhubekayo okanye utshintsho olunzulu kwiqondo lokushisa kwendalo, ukuhambelana kokuchaneka kokusika kunokugcinwa.
Ukuqina kunye nokumelana nokunxiba: Qinisekisa ukusebenza okuzinzile kwexesha elide kwezixhobo
Ukongeza kwiingenelo zokuxhathisa ukungcangcazela kunye nokuzinza kwe-thermal, ukuqina okuphezulu kunye nokumelana nokunxiba kwesiseko se-granite kwandisa ngakumbi ukuthembeka kwesixhobo sokusika i-wafer. I-Granite inobulukhuni be-6 ukuya kwi-7 kwisikali se-Mohs kunye namandla acinezelayo angaphezu kwe-120MPa. Inokumelana noxinzelelo olukhulu kunye namandla eempembelelo ngexesha lenkqubo yokusika kwaye ayithandeki kwi-deformation. Ngeli xesha, ubume bayo obuxineneyo buyenza ikwazi ukumelana nokunxiba. Nangona ngexesha lemisebenzi yokusika rhoqo, umphezulu wesiseko awuqhelekanga ukugqoka, ukuqinisekisa ukuba izixhobo zigcina ukusebenza okuphezulu ngokuchanekileyo ixesha elide.
Kwizicelo ezisebenzayo, uninzi lwamashishini okwenziwa kwe-wafer aphucule kakhulu isivuno semveliso kunye nokusebenza kakuhle kwemveliso ngokwamkela izixhobo zokusika ezineziseko zegranite. Idatha evela kwisiseko esikhokelayo kwihlabathi jikelele ibonisa ukuba emva kokwazisa izixhobo zesiseko se-granite, isivuno sokusika i-wafer sinyukile ukusuka kwi-88% ukuya ngaphezulu kwe-95%, umjikelo wokugcinwa kwezixhobo uye wandiswa ngamaxesha amathathu, ngokufanelekileyo ukunciphisa iindleko zemveliso kunye nokuphucula ukhuphiswano lwemarike.
Ukuqukumbela, isiseko segranite, esinokumelana nokungcangcazela okugqwesileyo, ukuzinza kwe-thermal, ukuqina okuphezulu kunye nokumelana nokunxiba, kubonelela ngeziqinisekiso ezibanzi zokusebenza kwezixhobo zokusika i-wafer. Njengoko itekhnoloji ye-semiconductor ihambela phambili ekuchanekeni okuphezulu, iziseko ze-granite ziya kudlala indima ebaluleke ngakumbi kwintsimi yokwenziwa kwe-wafer, ukukhuthaza uphuhliso oluqhubekayo lwemveliso ye-semiconductor.
Ixesha lokuposa: May-20-2025