Kwicandelo lokwenziwa kwe-semiconductor, elilandela ukuchaneka kokugqibela, i-coefficient of thermal expansion yenye yeeparameter eziphambili ezichaphazela umgangatho wemveliso kunye nokuzinza kwemveliso. Kuyo yonke inkqubo ukusuka kwi-photolithography, ukukrola ukuya ekupakisheni, umahluko kwi-thermal expansion coefficients yezinto zinokuphazamisana nokuchaneka kwemveliso ngeendlela ezahlukeneyo. Nangona kunjalo, isiseko se-granite, esine-ultra-low thermal expansion coefficient, siye saba sisitshixo sokusombulula le ngxaki.
Inkqubo yeLithography: Ukuguquka kobushushu kubangela ukuphambuka kwipateni
I-Photolithography linyathelo eliphambili ekwenzeni i-semiconductor. Ngomatshini we-photolithography, iipateni zesekethe kwimaski zidluliselwa kumphezulu we-wafer egqunywe yi-photoresist. Ngexesha lale nkqubo, ulawulo lobushushu ngaphakathi komatshini we-photolithography kunye nokuzinza kwetafile yokusebenza kubaluleke kakhulu. Thatha izinto zesinyithi zendabuko njengomzekelo. I-coefficient yazo yokwandiswa kobushushu imalunga ne-12×10⁻⁶/℃. Ngexesha lokusebenza komatshini we-photolithography, ubushushu obuveliswa ngumthombo wokukhanya we-laser, iilensi ze-optical kunye nezinto zoomatshini ziya kubangela ukuba ubushushu bezixhobo bunyuke nge-5-10 ℃. Ukuba itafile yokusebenza yomatshini we-lithography isebenzisa isiseko sesinyithi, isiseko esibude bemitha e-1 sinokubangela ukuguquguquka kokwandiswa kwe-60-120 μm, okuya kukhokelela ekutshintsheni kwindawo ehambelanayo phakathi kwemaski kunye ne-wafer.
Kwiinkqubo zokuvelisa eziphambili (ezifana ne-3nm kunye ne-2nm), isithuba se-transistor sincinci kakhulu kunee-nanometers. Utshintsho oluncinci kangaka lobushushu lwanele ukubangela ukuba iphethini ye-photolithography ingalungelelani, nto leyo ekhokelela kunxibelelwano olungaqhelekanga lwe-transistor, ii-short circuits okanye ii-open circuits, kunye neminye imiba, nto leyo ekhokelela ekungaphumelelini kwemisebenzi ye-chip. I-thermal expansion coefficient yesiseko se-granite iphantsi njenge-0.01μm/°C (oko kukuthi, (1-2) ×10⁻⁶/℃), kwaye utshintsho oluphantsi kotshintsho olufanayo lobushushu yi-1/10-1/5 kuphela yentsimbi. Inokubonelela ngeqonga elizinzileyo lokuthwala umthwalo kumatshini we-photolithography, ukuqinisekisa ukudluliselwa ngokuchanekileyo kwephethini ye-photolithography kunye nokuphucula kakhulu imveliso yokwenziwa kwe-chip.
Ukugrumba kunye nokubeka: Kuchaphazela ukuchaneka kobukhulu besakhiwo
Ukugrumba nokubeka izinto zezona nkqubo ziphambili zokwakha izakhiwo zesekethe ezinemilinganiselo emithathu kumphezulu we-wafer. Ngexesha lenkqubo yokugrumba, igesi ephendulayo ifumana impendulo yamakhemikhali kunye nezinto ezikumphezulu we-wafer. Okwangoku, izinto ezifana nombane we-RF kunye nolawulo lokuhamba kwegesi ngaphakathi kwesixhobo zivelisa ubushushu, nto leyo ebangela ukuba ubushushu be-wafer kunye nezixhobo zinyuke. Ukuba i-coefficient yokwandiswa kobushushu be-wafer carrier okanye isiseko sesixhobo ayifani ne-wafer (i-coefficient yokwandiswa kobushushu bezinto ze-silicon imalunga ne-2.6×10⁻⁶/℃), uxinzelelo lobushushu luya kuvela xa ubushushu butshintsha, nto leyo enokubangela ukuqhekeka okuncinci okanye ukugoba kumphezulu we-wafer.
Olu hlobo lokuguquguquka luya kuchaphazela ubunzulu bokugrumba kunye nokuma kodonga olusecaleni, nto leyo ebangela ukuba ubukhulu bemijelo egrumbayo, ngokusebenzisa imingxunya kunye nezinye izakhiwo ziphambuke kwiimfuno zoyilo. Ngokufanayo, kwinkqubo yokubeka ifilimu encinci, umahluko wokwandiswa kobushushu unokubangela uxinzelelo lwangaphakathi kwifilimu encinci egciniweyo, okukhokelela kwiingxaki ezinje ngokuqhekeka nokuqhekeka kwefilimu, okuchaphazela ukusebenza kombane kunye nokuthembeka kwexesha elide kwetshiphu. Ukusetyenziswa kweziseko zegranite ezine-coefficient yokwandiswa kobushushu efana neyezinto zesilicon kunokunciphisa ngempumelelo uxinzelelo lobushushu kwaye kuqinisekiswe uzinzo kunye nokuchaneka kweenkqubo zokubeka kunye nokubeka.
Inqanaba lokupakishwa: Ukungalingani kobushushu kubangela iingxaki zokuthembeka
Kwinqanaba lokupakisha le-semiconductor, ukuhambelana kwee-coefficients zokwandisa ubushushu phakathi kwe-chip kunye nezinto zokupakisha (ezifana ne-epoxy resin, i-ceramics, njl.njl.) kubaluleke kakhulu. I-coefficient yokwandisa ubushushu ye-silicon, izinto eziphambili zeetships, iphantsi kakhulu, ngelixa uninzi lwezinto zokupakisha luphezulu kakhulu. Xa ubushushu be-chip butshintsha ngexesha lokusetyenziswa, uxinzelelo lobushushu luya kwenzeka phakathi kwe-chip kunye nezinto zokupakisha ngenxa yokungafani kwee-coefficients zokwandisa ubushushu.
Olu xinzelelo lobushushu, phantsi kwempembelelo yemijikelo yobushushu ephindaphindwayo (njengokufudumala nokupholisa ngexesha lokusebenza kwetshiphu), lunokukhokelela ekuqhekekeni kokudinwa kwamalungu e-solder phakathi kwetshiphu kunye ne-substrate yokupakisha, okanye kubangele ukuba iintambo zokubopha kumphezulu wetshiphu ziwe, ekugqibeleni okubangela ukungaphumeleli konxibelelwano lombane lwetshiphu. Ngokukhetha izixhobo ze-substrate zokupakisha ezine-coefficient yokwandisa ubushushu esondele kakhulu kwezixhobo ze-silicon kunye nokusebenzisa amaqonga ovavanyo lwe-granite anozinzo oluhle kakhulu lobushushu ukuze kufunyanwe ngokuchanekileyo ngexesha lenkqubo yokupakisha, ingxaki yokungafani kobushushu inokunciphisa ngempumelelo, ukuthembeka kokupakisha kunokuphuculwa, kwaye ubomi benkonzo yetshiphu bunokwandiswa.
Ulawulo lwendalo yemveliso: Uzinzo oludibeneyo lwezixhobo kunye nezakhiwo zefektri
Ukongeza ekuchaphazeleni ngokuthe ngqo inkqubo yokuvelisa, i-coefficient yokwandiswa kobushushu ikwanxulumene nolawulo olupheleleyo lokusingqongileyo lweefektri ze-semiconductor. Kwiiworkshop ezinkulu zemveliso ye-semiconductor, izinto ezinje ngokuqala nokuma kweenkqubo zomoya opholileyo kunye nokusasazeka kobushushu kwiikluster zezixhobo zinokubangela ukuguquguquka kobushushu bokusingqongileyo. Ukuba i-coefficient yokwandiswa kobushushu bomgangatho wefektri, iziseko zezixhobo kunye nezinye iziseko ziphezulu kakhulu, utshintsho lobushushu bexesha elide luya kubangela ukuba umgangatho uqhekeke kwaye isiseko sezixhobo sitshintshe, ngaloo ndlela kuchaphazele ukuchaneka kwezixhobo ezichanekileyo ezifana noomatshini be-photolithography kunye noomatshini bokukrola.
Ngokusebenzisa iziseko zegranite njengezixhobo ezixhasayo nokuzidibanisa nezixhobo zokwakha zasefektri ezinee-coefficients zokwandisa ubushushu obuphantsi, imeko-bume yemveliso ezinzileyo ingadalwa, ukunciphisa ukuphindaphindeka kokulinganiswa kwezixhobo kunye neendleko zokugcina ezibangelwa kukuguquka kobushushu obungqongileyo, kunye nokuqinisekisa ukusebenza okuzinzileyo kwexesha elide komgca wemveliso we-semiconductor.
I-coefficient yokwandiswa kobushushu idlula kulo lonke umjikelo wobomi bokwenziwa kwee-semiconductor, ukusuka ekukhethweni kwezinto, ulawulo lwenkqubo ukuya ekupakishweni nasekuvavanyweni. Impembelelo yokwandiswa kobushushu kufuneka iqwalaselwe ngokungqongqo kuyo yonke ikhonkco. Iziseko zegranite, ezine-coefficient yazo ephantsi kakhulu yokwandiswa kobushushu kunye nezinye iipropati ezintle, zibonelela ngesiseko esizinzileyo somzimba sokwenziwa kwee-semiconductor kwaye ziba sisiqinisekiso esibalulekileyo sokukhuthaza uphuhliso lweenkqubo zokwenziwa kwee-chip ukuya kulungelelwano oluphezulu.
Ixesha leposi: Meyi-20-2025