Kwintsimi yokuvelisa i-semiconductor, elandela ukuchaneka kokugqibela, i-coefficient yokwandiswa kwe-thermal enye yeeparitha eziphambili ezichaphazela umgangatho wemveliso kunye nokuzinza kwemveliso. Kuyo yonke inkqubo esuka kwi-photolithography, ukudibanisa ukupakisha, ukungafani kwi-coefficients yokwandiswa kwe-thermal yezinto eziphathekayo kunokuphazamisa ukuchaneka kokuvelisa ngeendlela ezahlukeneyo. Nangona kunjalo, isiseko se-granite, kunye ne-ultra-low-low-low-coefficient yokwandisa i-thermal, ibe ngundoqo ekusombululeni le ngxaki.
Inkqubo yeLithography: Ukuguqulwa kwe-thermal kubangela ukuphambuka kwepateni
I-Photolithography linyathelo eliphambili kwimveliso ye-semiconductor. Ngomatshini we-photolithography, iipatheni zesekethe kwimaski zidluliselwa kumphezulu we-wafer efakwe ngefotoresist. Ngethuba le nkqubo, ulawulo lwe-thermal ngaphakathi kumatshini we-photolithography kunye nokuzinza kwe-worktable kubaluleke kakhulu. Thatha izinto zentsimbi zemveli njengomzekelo. I-coefficient yabo yokwandiswa kwe-thermal malunga ne-12×10⁻⁶/℃. Ngethuba lokusebenza komatshini we-photolithography, ubushushu obuveliswa ngumthombo wokukhanya kwe-laser, iilensi zamehlo kunye nezixhobo zoomatshini ziya kubangela ukuba ubushushu besixhobo bunyuke nge-5-10 ℃. Ukuba i-worktable yomshini we-lithography isebenzisa isiseko sesinyithi, isiseko se-1-meter-long-long sinokubangela ukuguqulwa kokwandiswa kwe-60-120 μm, okuya kukhokelela ekutshintsheni kwindawo ehambelanayo phakathi kwe-mask kunye ne-wafer.
Kwiinkqubo zokuvelisa eziphambili (ezifana ne-3nm kunye ne-2nm), isithuba se-transistor si-nanometers ezimbalwa kuphela. I-deformation encinci ye-thermal yanele ngokwaneleyo ukwenza ukuba iphethini ye-photolithography ingalungiswanga kakuhle, ekhokelela ekudibaneni okungaqhelekanga kwe-transistor, iisekethe ezimfutshane okanye iisekethe ezivulekileyo, kunye neminye imiba, ekhokelela ngokuthe ngqo ekungaphumeleli kwemisebenzi ye-chip. I-coefficient yokwandisa i-thermal yesiseko se-granite iphantsi njenge-0.01μm / ° C (okt, (1-2) × 10⁻⁶ / ℃), kunye nokuguqulwa phantsi kokutshintsha kweqondo lokushisa yi-1 / 10-1 / 5 kuphela yentsimbi. Inokubonelela ngeqonga elizinzileyo lokuthwala umthwalo kumatshini we-photolithography, ukuqinisekisa ukuhanjiswa ngokuchanekileyo kwephethini ye-photolithography kunye nokuphucula kakhulu isivuno sokwenziwa kwe-chip.
I-Etching kunye ne-deposition: Ukuchaphazela ukuchaneka kwe-dimensional yesakhiwo
I-Etching kunye ne-deposition ziinkqubo eziphambili zokwakhiwa kwezakhiwo zesekethe ezine-dimensional ezintathu kumphezulu we-wafer. Ngethuba lenkqubo ye-etching, i-gas esebenzayo ifumana i-chemical reaction kunye ne-surface material ye-wafer. Ngeli xesha, amacandelo afana nobonelelo lwamandla e-RF kunye nolawulo lokuhamba kwerhasi ngaphakathi kwesixhobo avelisa ubushushu, nto leyo ebangela ubushushu be-wafer kunye nezixhobo zezixhobo zinyuke. Ukuba i-coefficient yokwandiswa kwe-thermal ye-wafer carrier okanye isiseko sesixhobo asihambelani ne-wafer (i-coefficient yokwandiswa kwe-thermal yezinto ze-silicon malunga ne-2.6 × 10⁻⁶/℃), uxinzelelo lwe-thermal luya kuveliswa xa ubushushu buguquka, obunokubangela ukuqhekeka okuncinci okanye ukungqubuzana kumphezulu we-wafer.
Olu hlobo lokuguqulwa luya kuchaphazela ubunzulu be-etching kunye nokuma kodonga olusecaleni, okubangela ukuba imilinganiselo ye-grooves eqoshiwe, ngokusebenzisa imingxuma kunye nezinye izakhiwo ukuba ziphambuke kwiimfuno zoyilo. Ngokufanayo, kwinkqubo yokubeka ifilimu encinci, ukuhlukana kokwandiswa kwe-thermal kunokubangela uxinzelelo lwangaphakathi kwifilimu encinci, ekhokelela kwiingxaki ezinjengokuqhaqha kunye nokukhupha ifilimu, echaphazela ukusebenza kombane kunye nokuthembeka kwexesha elide le-chip. Ukusetyenziswa kweziseko zegranite kunye ne-coefficient yokwandiswa kwe-thermal efana neyomathiriyeli ye-silicon inokunciphisa ngokufanelekileyo uxinzelelo lwe-thermal kunye nokuqinisekisa ukuzinza kunye nokuchaneka kwe-etching kunye neenkqubo zokubeka.
Inqanaba lokupakisha: Ukungafani kobushushu kubangela imiba yokuthembeka
Kwinqanaba lokupakisha le-semiconductor, ukuhambelana kwe-coefficients yokwandisa i-thermal phakathi kwe-chip kunye nezinto zokupakisha (ezifana ne-epoxy resin, i-ceramics, njl.) kubaluleke kakhulu. I-coefficient yokwandiswa kwe-thermal ye-silicon, eyona nto ingundoqo yeechips, iphantsi, ngelixa ezona zinto zininzi zokupakisha ziphezulu. Xa ubushushu be-chip buguquka ngexesha lokusetyenziswa, uxinzelelo lwe-thermal luya kwenzeka phakathi kwe-chip kunye nempahla yokupakisha ngenxa yokungahambelani kwe-coefficients yokwandisa i-thermal.
Olu xinzelelo lwe-thermal, phantsi kweempembelelo zemijikelezo yeqondo lokushisa eliphindaphindiweyo (njengokufudumala kunye nokupholisa ngexesha lokusebenza kwe-chip), kunokukhokelela ekudinweni kokuqhekeka kwamalungu e-solder phakathi kwe-chip kunye ne-substrate yokupakisha, okanye kubangele ukuba iingcingo ezibophezelayo kumphezulu we-chip ziwe, ekugqibeleni kubangele ukusilela koqhagamshelwano lombane lwe-chip. Ngokukhetha ukupakisha imathiriyeli ye-substrate ene-coefficient yokwandiswa kwe-thermal kufutshane ne-silicon yezixhobo kunye nokusebenzisa iiplatifomu zokuvavanya i-granite ezinozinzo oluhle kakhulu lwe-thermal ukuchongwa ngokuchanekileyo ngexesha lenkqubo yokupakisha, ingxaki yokungahambi kakuhle kwe-thermal inokunciphisa ngokufanelekileyo, ukuthembeka kokupakisha kunokuphuculwa, kwaye ubomi benkonzo ye-chip bunokwenyuka.
Ulawulo lokusingqongileyo lwemveliso: Uzinzo olulungelelanisiweyo lwezixhobo kunye nezakhiwo zasefektri
Ukongeza kokuchaphazela ngokuthe ngqo inkqubo yokuvelisa, i-coefficient yokwandiswa kwe-thermal nayo ihambelana nokulawulwa kwendalo yonke yeefektri ze-semiconductor. Kwiindibano zocweyo ezinkulu zokuvelisa i-semiconductor, izinto ezinjengokuqala kunye nokumiswa kweenkqubo zokupholisa umoya kunye nokutshatyalaliswa kobushushu bamaqela ezixhobo kunokubangela ukuguquguquka kobushushu bendalo esingqongileyo. Ukuba i-coefficient yokwandiswa kwe-thermal yomgangatho wefektri, iziseko zezixhobo kunye nezinye iziseko ziphezulu kakhulu, utshintsho lwexesha elide lobushushu luya kubangela ukuba umgangatho uqhube kwaye isiseko sesixhobo sitshintshe, ngaloo ndlela sichaphazela ukuchaneka kwezixhobo ezichanekileyo ezifana nemishini ye-photolithography kunye ne-etching machines.
Ngokusebenzisa iziseko zegranite njengezixhobo ezixhasayo kunye nokudibanisa kunye nezinto zokwakha zefektri kunye ne-coefficients yokwandisa i-thermal ephantsi, indawo yokuvelisa ezinzileyo inokudalwa, ukunciphisa ukuphindaphinda kwezixhobo zokulinganisa kunye neendleko zokugcinwa okubangelwa ukuguqulwa kwe-thermal deformation, kunye nokuqinisekisa ukusebenza okuzinzile kwexesha elide lomgca wokuvelisa i-semiconductor.
I-coefficient yokwandiswa kwe-thermal ihamba kuwo wonke umjikelezo wobomi bokwenziwa kwe-semiconductor, ukusuka ekukhethweni kwezinto eziphathekayo, ulawulo lwenkqubo ukupakisha kunye nokuvavanya. Impembelelo yokwandiswa kwe-thermal kufuneka iqwalaselwe ngokungqongqo kuyo yonke ikhonkco. Iziseko zegranite, kunye ne-ultra-low coefficient yokwandiswa kwe-thermal kunye nezinye iipropathi ezigqwesileyo, zibonelela ngesiseko esizinzileyo sokwenziwa kwe-semiconductor kwaye ibe sisiqinisekiso esibalulekileyo sokukhuthaza uphuhliso lweenkqubo zokwenziwa kwetshiphu ngokubhekiselele ekuchanekeni okuphezulu.
Ixesha lokuposa: May-20-2025